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| PartNumber | IRFS4310PBF | IRFS4310 | IRFS4310N |
| Description | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC | 120 A, 100 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | |
| Manufacturer | IR | IR | - |
| Product Category | FETs - Single | FETs - Single | - |
| Packaging | Tube | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 330 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 78 ns | - | - |
| Rise Time | 110 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 140 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Rds On Drain Source Resistance | 7 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 68 ns | - | - |
| Typical Turn On Delay Time | 26 ns | - | - |
| Qg Gate Charge | 170 nC | - | - |
| Channel Mode | Enhancement | - | - |