MSD42SWT1G vs MSD42SWT1 vs MSD42

 
PartNumberMSD42SWT1GMSD42SWT1MSD42
DescriptionBipolar Transistors - BJT 150mA 300V NPNBipolar Transistors - BJT 150mA 300V NPN
ManufacturerON SemiconductorON SemiconductorON
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSC-70-3SC-70-3-
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max300 V300 V-
Collector Base Voltage VCBO300 V300 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.5 V0.5 V0.5 V
Maximum DC Collector Current0.15 A0.15 A0.15 A
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMSD42SW-MSD42SW
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
PackagingReelReelReel
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.15 A0.15 A0.15 A
DC Collector/Base Gain hfe Min2525-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz0.000219 oz0.000219 oz
Package Case--SC-70-3
Pd Power Dissipation--150 mW
Collector Emitter Voltage VCEO Max--300 V
Collector Base Voltage VCBO--300 V
Emitter Base Voltage VEBO--6 V
DC Collector Base Gain hfe Min--25
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