 |  | | |
| PartNumber | RJH65D27BDPQ-A0#T2 | RJH65D17DPK | RJH65S04DPQ |
| Description | IGBT Transistors IGBT - 650V/50A/TO-247A | ||
| Manufacturer | Renesas Electronics | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247A-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.3 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 100 A | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | RJH65D27BDPQ | - | - |
| Packaging | Tube | - | - |
| Continuous Collector Current Ic Max | 100 A | - | - |
| Brand | Renesas Electronics | - | - |
| Gate Emitter Leakage Current | +/- 1 uA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.211644 oz | - | - |