SIRC04DP-T1-GE3 vs SIRC04DP vs SIRC0501

 
PartNumberSIRC04DP-T1-GE3SIRC04DPSIRC0501
DescriptionMOSFET 30V Vds 20V Vgs PowerPAK SO-8
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-SO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance3.5 mOhms--
Vgs th Gate Source Threshold Voltage2.1 V--
Vgs Gate Source Voltage- 16 V, 20 V--
Qg Gate Charge16.6 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation50 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameTrenchFET, PowerPAK--
PackagingReel--
SeriesSIR--
Transistor Type1 N-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min140 S--
Fall Time9 ns--
Product TypeMOSFET--
Rise Time55 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time30 ns--
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