 | |  | |
| PartNumber | SPD07N20GBTMA1 | SPD07N20 | SPD07N20 G |
| Description | MOSFET N-Ch 200V 7A DPAK-2 | MOSFET N-Ch 200V 7A DPAK-2 | MOSFET N-Ch 200V 7A DPAK-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 7 A | 7 A | - |
| Rds On Drain Source Resistance | 300 mOhms | 400 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 31.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 40 W | 40 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 3 S | - | - |
| Fall Time | 30 ns | 30 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 40 ns | 40 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 55 ns | 55 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Part # Aliases | G SP000449008 SPD07N20 SPD07N20GXT | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Moisture Sensitive | - | Yes | - |