SS9012HTA vs SS9012-HBU vs SS9012H

 
PartNumberSS9012HTASS9012-HBUSS9012H
DescriptionBipolar Transistors - BJT PNP/40V/0.5A
ManufacturerON Semiconductor-Fairchild Semiconductor
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single, Pre-Biased
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3 Kinked Lead--
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 0.18 V-- 0.18 V
Maximum DC Collector Current0.5 A-0.5 A
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesSS9012--
DC Current Gain hFE Max202-202
Height4.7 mm--
Length4.7 mm--
PackagingAmmo Pack-Bulk
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 0.5 A-- 0.5 A
DC Collector/Base Gain hfe Min64--
Pd Power Dissipation625 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Unit Weight0.008466 oz-0.006314 oz
Part Aliases--SS9012HBU_NL
Package Case--TO-226-3, TO-92-3 (TO-226AA)
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
Power Max--625mW
Transistor Type--PNP
Current Collector Ic Max--500mA
Voltage Collector Emitter Breakdown Max--20V
DC Current Gain hFE Min Ic Vce--144 @ 50mA, 1V
Vce Saturation Max Ib Ic--600mV @ 50mA, 500mA
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition---
Pd Power Dissipation--625 mW
Collector Emitter Voltage VCEO Max--- 20 V
Collector Base Voltage VCBO--- 40 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--64
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