 | | | |
| PartNumber | FDI038AN06A0 | FDI030N06 | FDI040N06 |
| Description | MOSFET 60V 80a 0.0038 Ohms/VGS=10V | MOSFET NCH 60V 3.0Mohm | MOSFET PT3 Low Qg 60V, 4.0Mohm |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | E | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 | TO-262-3 | TO-262-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 80 A | 193 A | 168 A |
| Rds On Drain Source Resistance | 3.5 mOhms | 3.2 mOhms | 3.2 mOhms |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 310 W | 231 W | 231 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | - |
| Tradename | PowerTrench | PowerTrench | - |
| Packaging | Tube | Tube | Tube |
| Height | 7.88 mm | 7.88 mm | 7.88 mm |
| Length | 10.29 mm | 10.29 mm | 10.29 mm |
| Series | FDI038AN06A0 | FDI030N06 | FDI040N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Width | 4.83 mm | 4.83 mm | 4.83 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 60 ns | 33 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 144 ns | 178 ns | 40 ns |
| Factory Pack Quantity | 800 | 1000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 34 ns | 54 ns | 55 ns |
| Typical Turn On Delay Time | 17 ns | 39 ns | 30 ns |
| Part # Aliases | FDI038AN06A0_NL | - | - |
| Unit Weight | 0.073511 oz | 0.084199 oz | 0.073511 oz |
| Forward Transconductance Min | - | 154 S | 169 S |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FDI045N10A-F102 | MOSFET N-Channel PwrTrench 100V 164A 4.5mOhm | |
| FDI038AN06A0 | MOSFET 60V 80a 0.0038 Ohms/VGS=10V | ||
| FDI030N06 | MOSFET NCH 60V 3.0Mohm | ||
| FDI040N06 | MOSFET PT3 Low Qg 60V, 4.0Mohm | ||
ON Semiconductor |
FDI025N06 | MOSFET N-CH 60V 265A TO-262 | |
| FDI030N06 | MOSFET N-CH 60V 120A I2PAK | ||
| FDI038AN06A0 | MOSFET N-CH 60V 80A TO-262AB | ||
| FDI040N06 | MOSFET N-CH 60V 120A I2PAK | ||
| FDI045N10A | MOSFET N-CH 100V 120A I2PAK-3 | ||
| FDI045N10A-F102 | MOSFET N-CH 100V 120A I2PAK-3 | ||
| FDI047AN08A0 | MOSFET N-CH 75V 80A TO-262AB | ||
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| FDI038AN06A0_NL | Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB | ||
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