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| PartNumber | FDPF035N06B | FDPF035N06BES | FDPF035N06B_F152 |
| Description | Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Trans MOSFET N-CH 60V 88A 3-Pin TO-220F Rail - Bulk (Alt: FDPF035N06B_F152) | |
| Manufacturer | Fairchild Semiconductor | FSC | Fairchild Semiconductor |
| Product Category | Transistors - FETs, MOSFETs - Single | IC Chips | Transistors - FETs, MOSFETs - Single |
| Packaging | Tube | - | Tube |
| Unit Weight | 0.080072 oz | - | 0.080072 oz |
| Mounting Style | Through Hole | - | Through Hole |
| Package Case | TO-220-3 | - | TO-220-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 46.3 W | - | 46.3 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 23 ns | - | 23 ns |
| Rise Time | 33 ns | - | 33 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 88 A | - | 88 A |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Vgs th Gate Source Threshold Voltage | 4 V | - | 4 V |
| Rds On Drain Source Resistance | 3.5 mOhms | - | 3.5 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 56 ns | - | 56 ns |
| Typical Turn On Delay Time | 32 ns | - | 32 ns |
| Qg Gate Charge | 76 nC | - | 76 nC |
| Forward Transconductance Min | 176 S | - | 176 S |