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| PartNumber | IML3160AK | IML3160AK-TP | IML3160AK-TR |
| Description | IGBT Transistors MOSFET 600V 1.5A N-Channel Power MOSFET | ||
| Manufacturer | - | - | Exar Corporation |
| Product Category | - | - | FETs - Single |
| Series | - | - | - |
| Packaging | - | - | Digi-ReelR Alternate Packaging |
| Unit Weight | - | - | 0.008826 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | INTEGRATED MEMORY LOGIC |
| Package Case | - | - | TO-261-4, TO-261AA |
| Technology | - | - | Si |
| Operating Temperature | - | - | 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Number of Channels | - | - | 1 Channel |
| Supplier Device Package | - | - | SOT-223 |
| Configuration | - | - | Single |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 20W |
| Transistor Type | - | - | 1 N-Channel |
| Drain to Source Voltage Vdss | - | - | 600V |
| Input Capacitance Ciss Vds | - | - | 170pF @ 25V |
| FET Feature | - | - | - |
| Current Continuous Drain Id 25°C | - | - | 1.5A (Tc) |
| Rds On Max Id Vgs | - | - | 8 Ohm @ 750mA, 10V |
| Vgs th Max Id | - | - | 4V @ 250μA |
| Gate Charge Qg Vgs | - | - | 7.5nC @ 10V |
| Pd Power Dissipation | - | - | 20 W |
| Maximum Operating Temperature | - | - | + 85 C |
| Minimum Operating Temperature | - | - | - 40 C |
| Fall Time | - | - | 55 ns |
| Rise Time | - | - | 30 ns |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 1.5 A |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 7 Ohms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 22 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Qg Gate Charge | - | - | 7.5 nC |
| Forward Transconductance Min | - | - | 1 S |
| Channel Mode | - | - | Enhancement |