 |  |  | |
| PartNumber | IPA50R650CE | IPA50R650CEXKSA1 | IPA50R650CEXKSA2 |
| Description | MOSFET N-CH 500V 6.1A TO220FP | Darlington Transistors MOSFET N-Ch 550V 6.1A TO220FP-3 | MOSFET CONSUMER |
| Manufacturer | INF | Infineon Technologies | Infineon Technologies |
| Product Category | FETs - Single | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Series | XPA50R650 | IPA50R650 | - |
| Packaging | Tube | Tube | Tube |
| Part Aliases | IPA50R650CEXKSA2 SP001217232 | SP000992086 | IPA50R650CE SP001217232 |
| Mounting Style | Through Hole | Through Hole | - |
| Package Case | PG-TO220 | TO-220-3 | TO-220-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | - |
| Configuration | 1 N-Channel | Single | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Pd Power Dissipation | 27.2 W | 27 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Fall Time | 13 ns | 13 ns | - |
| Rise Time | 5 ns | 5 ns | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 6.1 A | 6.1 A | - |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
| Rds On Drain Source Resistance | 650 mOhms | 500 V | 500 V |
| Transistor Polarity | N-Channel | N-Channel | - |
| Typical Turn Off Delay Time | 13 ns | 27 ns | - |
| Typical Turn On Delay Time | 6 ns | 6 ns | - |
| Qg Gate Charge | 15 nC | 15 nC | - |
| Forward Transconductance Min | - | - | - |
| Channel Mode | Enhancement | - | - |
| Development Kit | - | - | - |
| Unit Weight | - | 0.211644 oz | - |
| Tradename | - | CoolMOS | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IPA50R650CEZKSA2 | ブランドニューオリジナル | ||
| IPA50R650CEXKSA2 , 2SD18 | ブランドニューオリジナル | ||
| IPA50R650CEXKSA1 | Darlington Transistors MOSFET N-Ch 550V 6.1A TO220FP-3 | ||
Infineon Technologies |
IPA50R650CE | MOSFET N-CH 500V 6.1A TO220FP | |
| IPA50R650CEXKSA2 | MOSFET CONSUMER |