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| PartNumber | IPB120N04S3-02 3PN0402 | IPB120N04S3-02(3PN0402) | IPB120N04S3-02 |
| Description | IGBT Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T | ||
| Manufacturer | - | - | INF |
| Product Category | - | - | FETs - Single |
| Series | - | - | OptiMOS-T |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPB120N04S302ATMA1 IPB120N04S302XT SP000261216 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 300 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 18 ns |
| Rise Time | - | - | 19 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Rds On Drain Source Resistance | - | - | 2 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 57 ns |
| Typical Turn On Delay Time | - | - | 35 ns |
| Channel Mode | - | - | Enhancement |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| IPB120N04S3-02 3PN0402 | ブランドニューオリジナル | ||
| IPB120N04S3-02(3PN0402) | ブランドニューオリジナル | ||
| IPB120N04S302ATMA1 | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) TO-263 - Bulk (Alt: IPB120N04S302ATMA1) | ||
Infineon Technologies |
IPB120N04S3-02 | IGBT Transistors MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS-T |