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| PartNumber | IPP083N10N5AKSA1 | IPP083N10N5 | IPP083N10N5 . |
| Description | MOSFET N-Ch 100V 73A TO220-3 | MOSFET DIFFERENTIATED MOSFETS (Alt: IPP083N10N5) | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | PG-TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 73 A | - | - |
| Rds On Drain Source Resistance | 8.3 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 30 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 100 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | - | - |
| Packaging | Tube | Tube | - |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 5 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 48 S | - | - |
| Fall Time | 5 ns | 5 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | 5 ns | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | 21 ns | - |
| Typical Turn On Delay Time | 13 ns | 13 ns | - |
| Part # Aliases | IPP083N10N5 SP001226036 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Part Aliases | - | IPP083N10N5 SP001226036 | - |
| Package Case | - | TO-220-3 | - |
| Pd Power Dissipation | - | 100 W | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | 73 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
| Rds On Drain Source Resistance | - | 11 mOhms | - |
| Qg Gate Charge | - | 30 nC | - |
| Forward Transconductance Min | - | 48 S | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP083N10N5AKSA1 | MOSFET N-Ch 100V 73A TO220-3 | |
| IPP083N10N5AKSA1 | MOSFET N-CH TO220-3 | ||
| IPP083N10N5 | MOSFET DIFFERENTIATED MOSFETS (Alt: IPP083N10N5) | ||
| IPP083N10N5 . | ブランドニューオリジナル |