IXD stock, IXD, IXDR35N60BD1


PartNumber	IXDR30N120D1	IXDR35N60BD1	IXDR35N60CD1
Description	IGBT Transistors 30 Amps 1200V	IGBT Transistors 35 Amps 600V
Manufacturer	IXYS	IXYS	-
Product Category	IGBT Transistors	IGBT Transistors	-
RoHS	Y	Y	-
Technology	Si	Si	-
Package / Case	ISOPLUS247-3	ISOPLUS-247-3	-
Mounting Style	Through Hole	Through Hole	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	1.2 kV	600 V	-
Collector Emitter Saturation Voltage	2.4 V	2.2 V	-
Maximum Gate Emitter Voltage	20 V	20 V	-
Continuous Collector Current at 25 C	50 A	38 A	-
Pd Power Dissipation	200 W	125 W	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	IXDR30N120	IXDR35N60B	-
Packaging	Tube	Tube	-
Continuous Collector Current Ic Max	60 A	48 A	-
Height	21.34 mm	21.34 mm	-
Length	16.13 mm	16.13 mm	-
Operating Temperature Range	- 55 C to + 150 C	- 55 C to + 150 C	-
Width	5.21 mm	5.21 mm	-
Brand	IXYS	IXYS	-
Continuous Collector Current	50 A	38 A	-
Gate Emitter Leakage Current	500 nA	500 nA	-
Product Type	IGBT Transistors	IGBT Transistors	-
Factory Pack Quantity	30	30	-
Subcategory	IGBTs	IGBTs	-
Tradename	ISOPLUS	-	-
Unit Weight	0.186952 oz	0.186952 oz	-

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IXD