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| PartNumber | IXFK80N200Q | IXFK80N20 | IXFK80N20Q |
| Description | MOSFET 80 Amps 200V 0.03 Rds | MOSFET 80 Amps 200V 0.03 Rds | |
| Manufacturer | - | IXYS | IXYS |
| Product Category | - | Transistors - FETs, MOSFETs - Single | FETs - Single |
| Series | - | IXFK80N20 | IXFK80N20 |
| Packaging | - | Tube | Tube |
| Unit Weight | - | 0.352740 oz | 0.352740 oz |
| Mounting Style | - | Through Hole | Through Hole |
| Tradename | - | HyperFET | HyperFET |
| Package Case | - | TO-264-3 | TO-264-3 |
| Technology | - | Si | Si |
| Number of Channels | - | 1 Channel | 1 Channel |
| Configuration | - | Single | Single |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | - | 360 W | 360 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Fall Time | - | 26 ns | 20 ns |
| Rise Time | - | 55 ns | 50 ns |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | - | 200 V | 200 V |
| Rds On Drain Source Resistance | - | 30 mOhms | 28 mOhms |
| Transistor Polarity | - | N-Channel | N-Channel |
| Typical Turn Off Delay Time | - | 120 ns | 75 ns |
| Typical Turn On Delay Time | - | 40 ns | 26 ns |
| Channel Mode | - | Enhancement | Enhancement |