SEMIX6 stock, SEMIX6, SEMIX603GAR066HDS

SEMIX603GAR066HDS vs SEMIX603GB066HDS vs SEMIX603GB12E4P


PartNumber	SEMIX603GAR066HDS	SEMIX603GB066HDS	SEMIX603GB12E4P
Description	SEMIX, Trench IGBT Module, 600V, 800A		SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A

Search Part Number : "SEMIX6", Match & Start with "SEMIX6" - Total : 12

メーカー	モデル	説明	RFQ
	SEMIX603GAR066HDS	SEMIX, Trench IGBT Module, 600V, 800A
	SEMIX603GB066HDS	ブランドニューオリジナル
	SEMIX603GB12E4P	SEMIX, Compact design- Trench IGBT Module, insulation by DCB, 1200V, 800A
	SEMIX604GAL12E4S	SEMIX, Trench IGBT Module, 1200V, 800A
	SEMIX604GB126HDS	SEMIX, Trench IGBT Module, 1200V, 400A
	SEMIX604GB12E4S	ブランドニューオリジナル
	SEMIX604GB12T4S	POWER IGBT TRANSISTOR
	SEMIX604GB12T4V6	ブランドニューオリジナル
	SEMIX604GB12VS	IGBT MODULE, DUAL, 1.2KV, 880A, Transistor Polarity:Dual NPN, DC Collector Current:880A, Collector Emitter Saturation Voltage Vce(on):1.75V, Power Dissipation Pd:-, Collector Emitter Voltage V(br
	SEMIX653GAL176HDS	IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
	SEMIX653GB176HDS	IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
	SEMIX653GD176HDC	IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC