SIHF3

SIHF35N60EF-GE3 vs SIHF30N60E-GE3 vs SIHF30N60E-E3

 
PartNumberSIHF35N60EF-GE3SIHF30N60E-GE3SIHF30N60E-E3
DescriptionMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAKMOSFET 600V Vds 30V Vgs TO-220 FULLPAK
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220FP-3TO-220FP-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V600 V
Id Continuous Drain Current32 A29 A29 A
Rds On Drain Source Resistance97 mOhms125 mOhms125 mOhms
Vgs th Gate Source Threshold Voltage2 V2.8 V2.8 V
Vgs Gate Source Voltage30 V30 V30 V
Qg Gate Charge134 nC85 nC85 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation39 W37 W37 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
SeriesEFEE
Transistor Type1 N-Channel EF-Series Power MOSFET--
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min8 S--
Fall Time61 ns36 ns36 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time85 ns32 ns32 ns
Factory Pack Quantity15050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time96 ns63 ns63 ns
Typical Turn On Delay Time28 ns19 ns19 ns
Packaging-TubeTube
Height-15.49 mm15.49 mm
Length-10.41 mm10.41 mm
Width-4.7 mm4.7 mm
Unit Weight-0.211644 oz0.211644 oz
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SIHF35N60EF-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF30N60E-GE3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF30N60E-E3 MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
SIHF30N60E-E3 IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
Vishay
Vishay
SIHF30N60E-GE3 RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
SIHF35N60E-GE3 Power MOSFET
SIHF35N60EF-GE3 EF Series Power MOSFET with Fast Body Diode TO-220 FULLPAK, 97 m @ 10V
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