 | |  | |
| PartNumber | SIHFS11N50A-GE3 | SIHFS9N60A-GE3 | SIHFS11N50A |
| Description | MOSFET 600V Vds E Series D2PAK TO-263 | MOSFET 600V Vds TO-263 D2PAK | |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 500 V | 600 V | - |
| Id Continuous Drain Current | 11 A | 9.2 A | - |
| Rds On Drain Source Resistance | 520 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 52 nC | 49 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 170 W | 170 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SIHFS | SIHFS | - |
| Transistor Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Forward Transconductance Min | 6.1 S | 5.5 S | - |
| Fall Time | 28 ns | 22 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 35 ns | 25 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 32 ns | 30 ns | - |
| Typical Turn On Delay Time | 14 ns | 13 ns | - |
| Unit Weight | 0.077603 oz | 0.077603 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SIHFS11N50A-GE3 | MOSFET 600V Vds E Series D2PAK TO-263 | |
| SIHFS9N60A-GE3 | MOSFET 600V Vds TO-263 D2PAK | ||
| SIHFS11N50A | ブランドニューオリジナル | ||
Vishay |
SIHFS11N50A-GE3 | Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK | |
| SIHFS9N60A-GE3 | Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK |