SISHA

SISHA12ADN-T1-GE3 vs SISHA04DN-T1-GE3 vs SISHA10DN-T1-GE3

 
PartNumberSISHA12ADN-T1-GE3SISHA04DN-T1-GE3SISHA10DN-T1-GE3
DescriptionMOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-Channel 30 V (D-S) MOSFETMOSFET N-Channel 30 V (D-S) MOSFET
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEEE
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerPAK-1212-8PowerPAK-1212-8PowerPAK-1212-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current25 A40 A30 A
Rds On Drain Source Resistance4.3 mOhms2.15 mOhms3.7 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1.1 V1.1 V
Vgs Gate Source Voltage- 16 V, 20 V- 16 V, 20 V- 16 V, 20 V
Qg Gate Charge29.5 nC51 nC34 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation28 W52 W39 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenamePowerPAKPowerPAKPowerPAK
PackagingReelReelReel
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min51 S105 S52 S
Fall Time10 ns10 ns10 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns17 ns10 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time25 ns25 ns27 ns
Typical Turn On Delay Time10 ns24 ns10 ns
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SISHA14DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SISHA12ADN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SISHA04DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
SISHA10DN-T1-GE3 MOSFET N-Channel 30 V (D-S) MOSFET
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