SQS405

SQS405EN-T1_GE3 vs SQS405EN-T1-GE3 vs SQS405ENW-T1-GE3

 
PartNumberSQS405EN-T1_GE3SQS405EN-T1-GE3SQS405ENW-T1-GE3
DescriptionMOSFET P-Channel 12V AEC-Q101 QualifiedMOSFET RECOMMENDED ALT 78-SQS405EN-T1_GE3
ManufacturerVishayVishay-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePowerPAK-1212-8PowerPAK-1212-8-
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current16 A--
Rds On Drain Source Resistance14 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage8 V--
Qg Gate Charge75 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation39 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101AEC-Q101-
TradenameTrenchFETTrenchFET-
PackagingReelReel-
Height1.04 mm1.04 mm-
Length3.3 mm3.3 mm-
SeriesSQSQ-
Transistor Type1 P-Channel--
Width3.3 mm3.3 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min34 S--
Fall Time26 ns--
Product TypeMOSFETMOSFET-
Rise Time29 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time59 ns--
Typical Turn On Delay Time27 ns--
メーカー モデル 説明 RFQ
Vishay / Siliconix
Vishay / Siliconix
SQS405EN-T1_GE3 MOSFET P-Channel 12V AEC-Q101 Qualified
SQS405ENW-T1_GE3 MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
SQS405EN-T1-GE3 MOSFET RECOMMENDED ALT 78-SQS405EN-T1_GE3
SQS405EN-T1-GE3 RF Bipolar Transistors MOSFET P-Channel 12V Automotive MOSFET
SQS405ENW-T1-GE3 ブランドニューオリジナル
Vishay
Vishay
SQS405EN-T1_GE3 MOSFET P-CH 12V 16A POWERPAK1212
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