 |  | | |
| PartNumber | TPH6400ENH,L1Q | TPH6400ENH | TPH6400ENH,L1Q(M |
| Description | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOP-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 54 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 11.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 57 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.95 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPH6400ENH | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.030018 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Toshiba |
TPH6400ENH,L1Q | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | |
| TPH6400ENHL1QCT-ND | ブランドニューオリジナル | ||
| TPH6400ENHL1QDKR-ND | ブランドニューオリジナル | ||
| TPH6400ENHL1QTR-ND | ブランドニューオリジナル | ||
| TPH6400ENH,L1Q | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | ||
| TPH6400ENHL1Q | MOSFET POWER MOSFET TRANSISTOR | ||
| TPH6400ENH | ブランドニューオリジナル | ||
| TPH6400ENH,L1Q(M | ブランドニューオリジナル |