 |  | | |
| PartNumber | VQ2001P | VQ2001P-2 | VQ2001P-2(VQ2001P) |
| Description | MOSFET Quad 30V 0.6A | MOSFET 4P-CH 30V 0.6A 14DIP | |
| Manufacturer | Vishay | Vishay Siliconix | SIL |
| Product Category | MOSFET | FETs - Arrays | IC Chips |
| RoHS | N | - | - |
| Technology | Si | Si | - |
| Packaging | Tube | Tube | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 25 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.042329 oz | 0.042329 oz | - |
| Series | - | - | - |
| Mounting Style | - | Through Hole | - |
| Package Case | - | 14-DIP | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Number of Channels | - | 4 Channel | - |
| Supplier Device Package | - | 14-DIP | - |
| Configuration | - | Quad | - |
| FET Type | - | 4 P-Channel | - |
| Power Max | - | 2W | - |
| Transistor Type | - | 4 P-Channel | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 150pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 600mA | - |
| Rds On Max Id Vgs | - | 2 Ohm @ 1A, 12V | - |
| Vgs th Max Id | - | 4.5V @ 1mA | - |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 600 mA | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 2 Ohms | - |
| Transistor Polarity | - | P-Channel | - |
| Channel Mode | - | Enhancement | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
VQ2001P | MOSFET Quad 30V 0.6A | |
Vishay |
VQ2001P-2 | MOSFET 4P-CH 30V 0.6A 14DIP | |
| VQ2001P | RF Bipolar Transistors MOSFET Quad 30V 0.6A | ||
| VQ2001P-2(VQ2001P) | ブランドニューオリジナル | ||
| VQ2001P-7 | ブランドニューオリジナル | ||
| VQ2001P-E3 | Trans MOSFET P-CH 30V 0.6A 14-Pin PDIP - Bulk (Alt: VQ2001P-E3) |