Wolfspeed presents the Z-Rec™ 1,700 V junction barrier Schottky (JBS) diode products. Leveraging silicon carbide’s unique advantages over silicon.
By Wolfspeed 1860
Wolfspeed's 650 V, 4 A, 6 A, 8 A, and 10 A silicon carbide Schottky diodes is added to its world class Z-Rec™ Schottky diode product line.
By Wolfspeed 2066
Wolfspeed's Z-REC rectifier boasts a small package and zero reverse-recovery energy.
By Wolfspeed 1733
Wolfspeed’s CMPA1D1E025F is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
By Wolfspeed 1454
Wolfspeed's SpeedFit is a free and powerful online circuit simulation tool that is 100% dedicated to simulating and evaluating the performance of SiC power devices.
By Wolfspeed 1814
Wolfspeed’s CGHV14800 is a GaN high-electron mobility transistor (HEMT) designed specifically with high-efficiency, high-gain, and wide-bandwidth capabilities.
By Wolfspeed 1186
Wolfspeed's CGHV59070, operating from a 50 V rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
By Wolfspeed 1404
Wolfspeed’s CGHV27060MP is a 60 W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small (4.4 mm x 6.5 mm) plastic SMT package.
By Wolfspeed 1474
Wolfspeed’s CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
By Wolfspeed 1096
Wolfspeed's CG2H40010 gallium nitride (GaN) high electron mobility transistor (HEMT) is available in a screw-down, flange package.
By Wolfspeed 1471
Cree Wolfspeed's CG2H40045 RF Power GaN HEMT offers a general purpose, broadband solution to a variety of RF and microwave applications.
By Wolfspeed 1283
Wolfspeed’s CGHV40050 operates from a 50 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.
By Wolfspeed 1399
Wolfspeed's CGH27015 GaN HEMT is designed for high-efficiency, high-gain, and wide bandwidth capabilities in amplifier applications.
By Wolfspeed 1562
Wolfspeed’s C3M0065090J 900 V MOSFET enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.
By Wolfspeed 1798
Cree Wolfspeed's C5D 1700 V Z-Rec® Schottky diode products were designed to help improve system efficiency.
By Wolfspeed 1374
Wolfspeed’s advanced SiC MOSFET technology is offered in low-inductance discrete packing, allowing engineers to take advantage of C3M™ planar MOSFET chips.
By Wolfspeed 1723
Wolfspeed's automotive-qualified, PPAP-capable, and humidity-resistant MOSFET offers low switching losses and high figure of merit.
By Wolfspeed 1595
Wolfspeed’s CGHV40030 GaN high-electron-mobility transistor is designed specifically for high-efficiency, high gain, and wide bandwidth capabilities.
By Wolfspeed 1687
Wolfspeed’s CG2H40025 GaN high-electron-mobility transistor offers a general purpose broadband solution for a variety of RF and microwave applications.
By Wolfspeed 1607