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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| F3L300R07PE4BOSA1 DISTI # V99:2348_17558237 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 300A 940000mW 21-Pin Tray RoHS: Compliant | 6 |
|
| F3L300R07PE4BOSA1 DISTI # V36:1790_17558237 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 300A 940000mW 21-Pin Tray RoHS: Compliant | 0 |
|
| F3L300R07PE4BOSA1 DISTI # F3L300R07PE4BOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 650V 300A Min Qty: 6 Container: Bulk | Temporarily Out of Stock |
|
| F3L300R07PE4PBOSA1 DISTI # F3L300R07PE4PBOSA1-ND | Infineon Technologies AG | MOD IGBT MED POWER ECONO4-1 Min Qty: 6 Container: Tray | Temporarily Out of Stock |
|
| F3L300R07PE4BOSA1 DISTI # 31011385 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 300A 940000mW 21-Pin Tray RoHS: Compliant | 6 |
|
| F3L300R07PE4BOSA1 DISTI # F3L300R07PE4BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 300A 20-Pin ECONO4-1 - Bulk (Alt: F3L300R07PE4BOSA1) Min Qty: 3 Container: Bulk | Americas - 0 |
|
| F3L300R07PE4BOSA1 DISTI # F3L300R07PE4BOSA1 | Infineon Technologies AG | Trans IGBT Module N-CH 650V 300A 20-Pin ECONO4-1 - Trays (Alt: F3L300R07PE4BOSA1) RoHS: Compliant Min Qty: 6 Container: Tray | Americas - 0 |
|
| F3L300R07PE4PBOSA1 DISTI # F3L300R07PE4PBOSA1 | Infineon Technologies AG | MEDIUM POWER ECONO - Trays (Alt: F3L300R07PE4PBOSA1) RoHS: Compliant Min Qty: 6 Container: Tray | Americas - 0 |
|
| F3L300R07PE4PBOSA1 DISTI # 34AC1549 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 280A,Transistor Polarity:N Channel,DC Collector Current:280A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:20mW,Collector Emitter Voltage V(br)ceo:650V,Transistor Case RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| F3L300R07PE4BOSA1 DISTI # 12AC9647 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 300A,Transistor Polarity:N Channel,DC Collector Current:300A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:940W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| F3L300R07PE4PBOSA1 DISTI # 726-F3L300R07PE4PBOS | Infineon Technologies AG | Infineon MEDIUM POWER ECONO RoHS: Compliant | 6 |
|
| F3L300R07PE4BOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor Module RoHS: Compliant | 6 |
|
| F3L300R07PE4 DISTI # F3L300R07PE4 | Infineon Technologies AG | Three-level inverter,single-phase, NTC thermistor,Urmax:650V | 1 |
|
| F3L300R07PE4PBOSA1 DISTI # 2781224 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 280A RoHS: Compliant | 0 |
|
| F3L300R07PE4BOSA1 DISTI # 2709962 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 300A RoHS: Compliant | 0 |
|
| F3L300R07PE4PBOSA1 DISTI # 2781224 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 280A RoHS: Compliant | 0 |
|
| F3L300R07PE4BOSA1 DISTI # 2709962 | Infineon Technologies AG | IGBT, MODULE, N-CH, 650V, 300A RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: F3L300RO7PE4-ENG OMO.#: OMO-F3L300RO7PE4-ENG-1190 |
ブランドニューオリジナル |