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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SIE20034 | STMicroelectronics | RoHS: Compliant | Europe - 564 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SIE876DF-T1-GE3 OMO.#: OMO-SIE876DF-T1-GE3-VISHAY |
IGBT Transistors MOSFET 60V 110A 125W 6.1mohm @ 10V |
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Mfr.#: SIE808DF-T1-GE3 OMO.#: OMO-SIE808DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 220A 125W 1.6mohm @ 10V |
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Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3-VISHAY |
RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V |
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Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3-317 |
RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V |
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Mfr.#: SIE812DF-T1-E3 OMO.#: OMO-SIE812DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V |
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Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V |
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Mfr.#: SIE832DF-T1-E3 OMO.#: OMO-SIE832DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 40V 50A 104W |
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Mfr.#: SIE820DF-T1-E3 OMO.#: OMO-SIE820DF-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 20V 50A 104W 3.5mohm @ 4.5V |
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Mfr.#: SIE22-12 OMO.#: OMO-SIE22-12-1190 |
ブランドニューオリジナル |
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Mfr.#: SIE868DFT1GE3 OMO.#: OMO-SIE868DFT1GE3-1190 |
Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |