SIE812DF-T1-E3

SIE812DF-T1-E3
Mfr. #:
SIE812DF-T1-E3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SIE812DF-T1-E3 データシート
配達:
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支払い:
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ECAD Model:
詳しくは:
SIE812DF-T1-E3 詳しくは
製品属性
属性値
Tags
SIE812, SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SiE812DF Series N-Channel 40 V 0.0026 Ohm 125 W Surface Mount Mosfet - PolarPAK
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0034ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:2.3V ;RoHS Compliant: Yes
***nell
MOSFET, N, POLAR PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:163A; Resistance, Rds On:0.0026ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.3V; Case Style:PolarPAK; Termination Type:SMD; Operating Temperature Range:-50°C to +150°C; Base Number:812; Current, Idm Pulse:100A; N-channel Gate Charge:52nC; Power Dissipation:125mW; Power, Pd:125W; Resistance, Rds on @ Vgs = 10V:0.0026ohm; Resistance, Rds on @ Vgs = 4.5V:0.0034ohm; Voltage, Rds Measurement:10V; Voltage, Vds Max:40V; Voltage, Vgs th Max:3V; Voltage, Vgs th Min:1.5V
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
モデル メーカー 説明 ストック 価格
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3TR-ND
Vishay SiliconixMOSFET N-CH 40V 60A 10-POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE812DF-T1-E3
DISTI # SIE812DF-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE812DF-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE812DF-T1-E3
DISTI # 781-SIE812DF-T1-E3
Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10V
RoHS: Compliant
0
  • 3000:$2.0700
SIE812DF-T1-E3Vishay IntertechnologiesMOSFET 40V 60A 125W 2.6mohm @ 10VAmericas -
    SIE812DF-T1-E3
    DISTI # 1497643
    Vishay Intertechnologies 
    RoHS: Compliant
    0
    • 1:$5.5100
    • 10:$4.5600
    • 100:$3.7500
    • 250:$3.6500
    • 500:$3.3100
    • 1000:$3.2900
    • 3000:$3.2800
    画像 モデル 説明
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3

    MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3

    MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-GE3

    Mfr.#: SIE812DF-T1-GE3

    OMO.#: OMO-SIE812DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 40V 163A 125W 2.6mohm @ 10V
    SIE812DF-T1-E3

    Mfr.#: SIE812DF-T1-E3

    OMO.#: OMO-SIE812DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 40V 60A 125W 2.6mohm @ 10V
    SIE812DF

    Mfr.#: SIE812DF

    OMO.#: OMO-SIE812DF-1190

    ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    2500
    数量を入力してください:
    SIE812DF-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $2.24
    $2.24
    10
    $2.12
    $21.23
    100
    $2.01
    $201.15
    500
    $1.90
    $949.90
    1000
    $1.79
    $1 788.00
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