BSP322PL6327

Mfr. #:: BSP322PL6327
メーカー:: Rochester Electronics, LLC
説明:: Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
ライフサイクル:: メーカー新製品
データシート:: BSP322PL6327 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

Tags: BSP322PL, BSP322, BSP32, BSP3, BSP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSP322PL6327 説明

***ark: MOSFET, P-CH, 100V, 1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain

***ical: Trans MOSFET P-CH 100V 1A 4-Pin(3+Tab) SOT-223 T/R

***ment14 APAC: MOSFET, P-CH, 100V, 1A, SOT-223

***i-Key: MOSFET P-CH 100V 1A SOT-223

***nell: MOSFET, P-CH, 100V, 1A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Dissipation Pd:1.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

Market price

モデル	メーカー	説明	ストック	価格
BSP322PL6327HTSA1 DISTI # BSP322PL6327HTSA1TR-ND	Infineon Technologies AG	MOSFET P-CH 100V 1A SOT-223 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	Limited Supply - Call
BSP322PL6327HTSA1 DISTI # BSP322PL6327HTSA1	Infineon Technologies AG	- Bulk (Alt: BSP322PL6327HTSA1) RoHS: Compliant Min Qty: 1786 Container: Bulk	Americas - 0	17860:$0.1769 8930:$0.1809 5358:$0.1869 3572:$0.1939 1786:$0.2009
BSP322P L6327 DISTI # 726-BSP322PL6327	Infineon Technologies AG	MOSFET P-Ch -100V 1A SOT-223-3 RoHS: Compliant	0
BSP322PL6327	Infineon Technologies AG	Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	5380	1000:$0.2400 500:$0.2500 100:$0.2600 25:$0.2700 1:$0.2900
BSP322PL6327HTSA1	Infineon Technologies AG	Small Signal Field-Effect Transistor RoHS: Not Compliant	29000	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300

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	Mfr.#: BSP322PH6327 OMO.#: OMO-BSP322PH6327-1190	ブランドニューオリジナル
	Mfr.#: BSP322PH6327XTSA1 OMO.#: OMO-BSP322PH6327XTSA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 100V 1A SOT-223
	Mfr.#: BSP322PL6327 OMO.#: OMO-BSP322PL6327-1190	Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	Mfr.#: BSP322PL6327HTSA1 OMO.#: OMO-BSP322PL6327HTSA1-INFINEON-TECHNOLOGIES	MOSFET P-CH 100V 1A SOT-223