FDFME2P823ZT

Mfr. #:: FDFME2P823ZT
メーカー:: ON Semiconductor
説明:: IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
ライフサイクル:: メーカー新製品
データシート:: FDFME2P823ZT データシート
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製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

単位重量: 0.000889 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: microFET-6

テクノロジー: Si

チャネル数: 2 Channel

構成: ショットキーダイオード付きシングル

トランジスタタイプ: 2 P-Channel

Pd-電力損失: 1.3 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 16 ns

立ち上がり時間: 4.8 ns

Vgs-Gate-Source-Voltage: +/- 8 V

Id-連続-ドレイン-電流: - 2.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 0.6 V

Rds-On-Drain-Source-Resistance: 95 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 33 ns

典型的なターンオン遅延時間: 4.7 ns

Qg-Gate-Charge: 5.5 nC

フォワード-相互コンダクタンス-最小: 7 S

Tags: FDFME, FDFM, FDF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME2P823ZT 説明

***p One Stop Global: Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R

***nell: MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

モデル	メーカー	説明	ストック	価格
FDFME2P823ZT DISTI # FDFME2P823ZTTR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTCT-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTDKR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME2P823ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
FDFME2P823ZT DISTI # 512-FDFME2P823ZT	ON Semiconductor	MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS: Compliant	0

FDFME2P823ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes