SI8808DB-T2-E1

Name: Vishay - SI8808DB-T2-E1
Brand: Vishay
SKU: OMO-3402344
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8808DB-T2-E1
メーカー:: Vishay
説明:: MOSFET N-CH 30V MICROFOOT
ライフサイクル:: メーカー新製品
データシート:: SI8808DB-T2-E1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI8808DB-T2-E1 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: マイクロフット

パッケージ-ケース: 4-UFBGA

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-Microfoot

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 500mW

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 330pF @ 15V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 95 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

ゲートチャージ-Qg-Vgs: 10nC @ 8V

Pd-電力損失: 900 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 2.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 0.9 V

Rds-On-Drain-Source-Resistance: 95 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 3.7 nC

フォワード-相互コンダクタンス-最小: 10 S

Tags: SI880, Si88, SI8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8808DB-T2-E1 説明

***ical: Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R

***et: N-CHANNEL 30 V (D-S) MOSFET

***: N-CHANNEL 8-V (D-S) MOSFET

***i-Key: MOSFET N-CH 30V MICROFOOT

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:900Mv; Power Dissipation Pd:900Mw; No. Of Pins:4Pins Rohs Compliant: No

SI8808DB-T2-E1 詳しくは

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI8808DB-T2-E1 DISTI # V72:2272_09216536	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant	5955	3000:$0.1448 1000:$0.1577 500:$0.2033 250:$0.2384 100:$0.2480 25:$0.3001 10:$0.3335 1:$0.4370
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	22093In Stock	1000:$0.1872 500:$0.2423 100:$0.3304 10:$0.4410 1:$0.5200
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	22093In Stock	1000:$0.1872 500:$0.2423 100:$0.3304 10:$0.4410 1:$0.5200
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.1657
SI8808DB-T2-E1 DISTI # 25790129	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant	5955	3000:$0.1448 1000:$0.1577 500:$0.2033 250:$0.2384 100:$0.2480 51:$0.3001
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 6000	3000:$0.1949 6000:$0.1939 12000:$0.1939 18000:$0.1929 30000:$0.1929
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2329 6000:€0.1589 12000:€0.1369 18000:€0.1259 30000:€0.1169
SI8808DB-T2-E1. DISTI # 28AC2185	Vishay Intertechnologies	N-CHANNEL 30 V (D-S) MOSFET , ROHS COMPLIANT: NO	6000	1:$0.1620 3000:$0.1620
SI8808DB-T2-E1 DISTI # 78-SI8808DB-T2-E1	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	3856	1:$0.4600 10:$0.3510 100:$0.2610 500:$0.2140 1000:$0.1660 3000:$0.1620
SI8808DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8808DB-T2-E1 DISTI # C1S803602004241	Vishay Intertechnologies	MOSFETs	5955	100:$0.2480 50:$0.2949 25:$0.3277 10:$0.3335
SI8808DB-T2-E1	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	Americas -

SI8808DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes