MR4A08BCYS35R

Mfr. #:: MR4A08BCYS35R
メーカー:: Everspin Technologies
説明:: NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
ライフサイクル:: メーカー新製品
データシート:: MR4A08BCYS35R データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: MR4A08BCYS35R 詳しくは

製品属性
属性値

メーカー: Everspin Technologies Inc.

製品カテゴリ: メモリー

シリーズ: MR4A08B

包装: テープ＆リール（TR）代替パッケージ

取り付けスタイル: SMD / SMT

パッケージ-ケース: TSOP-44

作動温度: -40°C ~ 85°C (TA)

インターフェース: 平行

電圧供給: 3 V ~ 3.6 V

サプライヤー-デバイス-パッケージ: 44-TSOP2 (10.2x18.4)

メモリー容量: 16M (2M x 8)

メモリタイプ: MRAM（磁気抵抗RAM）

スピード: 35ns

アクセス時間: 35 ns

フォーマット-メモリ: 羊

最高作動温度: + 85 C

最低作動温度: - 40 C

動作-供給-電流: 100 mA

インターフェイスタイプ: 平行

組織: 2 M x 8

データバス幅: 8 bit

供給-電圧-最大: 3.6 V

供給-電圧-最小: 3 V

Tags: MR4A08BC, MR4A0, MR4A, MR4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MR4A08BCYS35R 評価とレビュー

S***v

Great!

2019-04-09

C***o

Great

2019-06-15

O***v

I never got anything

2019-04-14

MR4A08BCYS35R 説明

***i-Key: IC RAM 16MBIT PARALLEL 44TSOP2

MR4A08BCYS35R 詳しくは

MR4A08B / MR4A16B 16Mb Parallel MRAMs: Everspin Technologies MR4A08B and MR4A16B 16Mb Parallel MRAM devices provide SRAM compatible 35ns read/write timing with unlimited endurance. The Everspin Technologies MR4A08B is a 16,777,216-bit Magnetoresistive Random Access Memory (MRAM) device organized as 2,097,152 words of 8 bits.

Magnetoresistive Random Access Memory (MRAM): Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.

Everspin MRAM

Market price

モデル	メーカー	説明	ストック	価格
MR4A08BCYS35R DISTI # MR4A08BCYS35R-ND	Everspin Technologies	IC RAM 16M PARALLEL 44TSOP2 RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Temporarily Out of Stock	1500:$30.0048
MR4A08BCYS35 DISTI # 936-MR4A08BCYS35	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM RoHS: Compliant	863	1:$38.1900 5:$36.6500 10:$35.4200 25:$34.1700 50:$33.3200 100:$29.7400 250:$28.3700
MR4A08BCYS35R DISTI # 936-MR4A08BCYS35R	Everspin Technologies	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM RoHS: Compliant	0	1500:$28.6200

関連製品

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	Mfr.#: MR4A08BUYS45 OMO.#: OMO-MR4A08BUYS45	NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BYS35 OMO.#: OMO-MR4A08BYS35	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BCYS35R OMO.#: OMO-MR4A08BCYS35R	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BMA35 OMO.#: OMO-MR4A08BMA35	NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BYS35R OMO.#: OMO-MR4A08BYS35R	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BUYS45R OMO.#: OMO-MR4A08BUYS45R	NVRAM 16Mb 3.3V 45ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BCMA35R OMO.#: OMO-MR4A08BCMA35R	NVRAM 16MB 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BCYS35R OMO.#: OMO-MR4A08BCYS35R-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BCYS35 OMO.#: OMO-MR4A08BCYS35-EVERSPIN-TECHNOLOGIES	NVRAM 16Mb 3.3V 35ns 2Mx8 Parallel MRAM
	Mfr.#: MR4A08BMA35R OMO.#: OMO-MR4A08BMA35R-EVERSPIN-TECHNOLOGIES	IC RAM 16M PARALLEL 48FBGA