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RJU6052TDPP-EJ#T2

RJU6052TDPP-EJ#T2
Mfr. #:
RJU6052TDPP-EJ#T2
メーカー:
Renesas Electronics
説明:
Diodes - General Purpose, Power, Switching FRDiode 600V/10A/25ns Trr/TO-220FP-2L
ライフサイクル:
メーカー新製品
データシート:
RJU6052TDPP-EJ#T2 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
RJU6052TDPP-EJ#T2 DatasheetRJU6052TDPP-EJ#T2 Datasheet (P4)
ECAD Model:
製品属性
属性値
メーカー：
ルネサスエレクトロニクス
製品カテゴリ：
ダイオード-汎用、電力、スイッチング
JBoss：
Y
包装：
チューブ
ブランド：
ルネサスエレクトロニクス
感湿性：
はい
製品タイプ：
ダイオード-汎用、電力、スイッチング
ファクトリーパックの数量：
1
サブカテゴリ：
ダイオードと整流器
Tags
RJU6052, RJU605, RJU6, RJU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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Diodes - General Purpose, Power, Switching FRDiode 600V/10A/25ns Trr/TO-220FP-2L
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***ment14 APAC
DIODE, HYPERFAST, 8A, 600V; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:3V; Reverse Recovery Time trr Max:16ns; Forward Surge Current Ifsm Max:110A; Operating Temperature Range:-65°C to +175°C; Diode Case Style:TO-220AC; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifsm:110A; Forward Current If Max:8A; Forward Voltage:3V; Junction Temperature Tj Max:175°C; Junction to Case Thermal Resistance A:0°C/W; Package / Case:TO-220AC; Reverse Recovery Time trr Typ:19ns; Termination Type:Through Hole
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***S
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***ment14 APAC
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Diode; Diode Type:Fast Recovery; Repetitive Reverse Voltage Max, Vrrm:600V; Forward Current, If(AV):8A; Forward Voltage Max, VF:3V; Reverse Recovery Time, trr:17ns; Forward Surge Current Max, Ifsm:110A ;RoHS Compliant: Yes
***nell
DIODE, HYPERFAST, 8A, 600V; Diode Type:Fast Recovery; Voltage, Vrrm:600V; Current, If AV:8A; Current, Ifsm:110A; Time, trr Typ:15ns; Voltage, Vf Max:3V; Temperature, Tj Max:175°C; Termination Type:Through Hole; Operating Temperature Range:-65°C to +175°C; Case Style:TO-220FP; No. of Pins:3; Alternate Case Style:TO-220FP; Current, Ifs Max:110A; Forward Current:8A; Forward Voltage:3V; Thermal Resistance, Junction to Case A:0°C/W; Time, trr Max:16ns
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***nell
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***rchild Semiconductor
The FFPF08S60SN is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
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***ment14 APAC
DIODE, ULTRAFAST, 8A, 600V; Diode Type:Soft Recovery; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):8A; Forward Voltage VF Max:2.4V; Reverse Recovery Time trr Max:18ns; Forward Surge Current Ifsm Max:100A; Operating Temperature Range:-55°C to +175°C; Diode Case Style:TO-220AC; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Ifrm:16A; Current Ifsm:100A; Junction Temperature Tj Max:175°C; Package / Case:TO-220AC; Reverse Recovery Time trr Typ:25ns; Termination Type:Through Hole
***rchild Semiconductor
The ISL9R860P2 is a STEALTH™ diode optimized for low loss performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
画像 モデル 説明
RJU6052TDPP-EJ#T2

Mfr.#: RJU6052TDPP-EJ#T2

OMO.#: OMO-RJU6052TDPP-EJ-T2

 Diodes - General Purpose, Power, Switching FRDiode 600V/10A/25ns Trr/TO-220FP-2L
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
RJU6052TDPP-EJ#T2の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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