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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk | Temporarily Out of Stock |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1-ND | Infineon Technologies AG | IGBT MODULE VCES 1200V 200A RoHS: Not compliant Min Qty: 10 Container: Bulk | Temporarily Out of Stock |
|
| FF200R12KT3 DISTI # FF200R12KT3 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: FF200R12KT3) RoHS: Compliant Min Qty: 10 | Asia - 50 |
|
| FF200R12KT3 DISTI # SP000100789 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: SP000100789) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FF200R12KT3_E DISTI # SP000314729 | Infineon Technologies AG | Trans IGBT Module N-CH 1.2KV 295A 7-pin 62MM-1 (Alt: SP000314729) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| FF200R12KT3HOSA1 DISTI # FF200R12KT3HOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3HOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Bulk (Alt: FF200R12KT3EHOSA1) Min Qty: 4 Container: Bulk | Americas - 0 |
|
| FF200R12KT3EHOSA1 DISTI # FF200R12KT3EHOSA1 | Infineon Technologies AG | MEDIUM POWER 62MM - Trays (Alt: FF200R12KT3EHOSA1) RoHS: Compliant Min Qty: 10 Container: Tray | Americas - 0 |
|
| FF200R12KT3HOSA1 DISTI # 13AC8640 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A,Transistor Polarity:N Channel,DC Collector Current:295A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:1.05kW,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes | 10 |
|
| FF200R12KT3 DISTI # 641-FF200R12KT3 | Infineon Technologies AG | IGBT Modules N-CH 1.2KV 295A | 13 |
|
| FF200R12KT3_E DISTI # 641-FF200R12KT3_E | Infineon Technologies AG | IGBT Modules IGBT 1200V 200A | 4 |
|
| FF200R12KT3EHOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS: Compliant | 4 |
|
| FF200R12KT3EHOSA1 DISTI # 8386894 | Infineon Technologies AG | IGBT MODULE N-CH 1.2KV 295A AG-62MM-1, EA | 9 |
|
| FF200R12KT3HOSA1 DISTI # 2726124 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A RoHS: Compliant | 10 |
|
| FF200R12KT3HOSA1 DISTI # 2726124 | Infineon Technologies AG | IGBT, MODULE, N-CH, 1.2KV, 295A | 8 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: F200R12KT3 OMO.#: OMO-F200R12KT3-1190 |
ブランドニューオリジナル |