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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC031N06NS3 G DISTI # 30610688 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 9995 |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Temporarily Out of Stock |
|
| BSC031N06NS3GATMA1 DISTI # BSC031N06NS3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Temporarily Out of Stock |
|
| BSC031N06NS3 G DISTI # C1S322000192300 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 9295 |
|
| BSC031N06NS3GXT DISTI # BSC031N06NS3GATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC031N06NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC031N06NS3GATMA1 DISTI # 85X4151 | Infineon Technologies AG | MOSFET, N-CH, 60V, 100A, 139W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes | 0 |
|
| BSC031N06NS3 G DISTI # 726-BSC031N06NS3G | Infineon Technologies AG | MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 0 |
|
| BSC031N06NS3GATMA1 DISTI # 7545257P | Infineon Technologies AG | MOSFET N-CHANNEL 60V 100A TDSON8, RL | 1 |
|
| BSC031N06NS3G | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 2510 | |
| BSC031N06NS3G | Infineon Technologies AG | 1181 | ||
| BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 90 |
|
| BSC031N06NS3G | Infineon Technologies AG | 60V,100A,N Channel Power MOSFET | 205 |
|
| BSC031N06NS3GATMA1 DISTI # 2443369 | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| BSC031N06NS3GATMA1 DISTI # 2443369RL | Infineon Technologies AG | MOSFET, N CH, 60V, 100A, TDSON-8 RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G |
MOSFET N-Ch 60V 100A TDSON-8 OptiMOS 3 |
|
Mfr.#: BSC031N06NS3 OMO.#: OMO-BSC031N06NS3-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC031N06NS3 G OMO.#: OMO-BSC031N06NS3-G-1190 |
Trans MOSFET N-CH 60V 100A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC031N06NS3G OMO.#: OMO-BSC031N06NS3G-1190 |
Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC031N06NS3GATMA1 |
MOSFET N-CH 60V 100A TDSON-8 |
|
|
Mfr.#: BSC031N06NS3GATMA1 , TDA |
ブランドニューオリジナル |