IPB025N08N3G

Mfr. #:: IPB025N08N3G
メーカー:: INFINEON
説明:
ライフサイクル:: メーカー新製品
データシート:: IPB025N08N3G データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

Tags: IPB025N08N3G, IPB025N0, IPB025, IPB02, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
IPB025N08N3GATMA1 DISTI # V72:2272_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	250:$3.3110 100:$3.6790 25:$4.3870 10:$4.6520 1:$5.9147
IPB025N08N3GATMA1 DISTI # V36:1790_06377516	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$2.2040 500000:$2.2060 100000:$2.3980 10000:$2.7270 1000:$2.7810
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7579In Stock	500:$3.3963 100:$3.9897 10:$4.8690 1:$5.4200
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7579In Stock	500:$3.3963 100:$3.9897 10:$4.8690 1:$5.4200
IPB025N08N3GATMA1 DISTI # IPB025N08N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 80V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	5000In Stock	2000:$2.6419 1000:$2.7809
IPB025N08N3 G DISTI # 32731516	Infineon Technologies AG	0	1000	4:$6.3125
IPB025N08N3GATMA1 DISTI # 31005994	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$2.3219
IPB025N08N3GATMA1 DISTI # 32864934	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	760	5:$2.3219
IPB025N08N3GATMA1 DISTI # 30331029	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	491	3:$5.9147
IPB025N08N3 G DISTI # IPB025N08N3 G	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) RoHS: Compliant Min Qty: 148 Container: Bulk	Americas - 0	740:$2.0900 1480:$2.0900 444:$2.1900 296:$2.2900 148:$2.3900
IPB025N08N3GXT DISTI # IPB025N08N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB025N08N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$2.3900 10000:$2.3900 4000:$2.4900 2000:$2.5900 1000:$2.6900
IPB025N08N3GATMA1 DISTI # SP000311980	Infineon Technologies AG	Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R (Alt: SP000311980) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.9900 6000:€2.1900 4000:€2.2900 2000:€2.3900 1000:€2.4900
IPB025N08N3GATMA1 DISTI # 60R2648	Infineon Technologies AG	MOSFET, N CHANNEL, 80V, 120A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V RoHS Compliant: Yes	0	500:$3.1700 250:$3.5400 100:$3.7300 50:$3.9200 25:$4.1000 10:$4.2900 1:$5.0500
IPB025N08N3 G DISTI # 726-IPB025N08N3G	Infineon Technologies AG	MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1000	1:$5.0000 10:$4.2500 100:$3.6900 250:$3.5000 500:$3.1400 1000:$2.6400 2000:$2.5100
IPB025N08N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	20	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3 G	Infineon Technologies AG	Power Field-Effect Transistor, 120A I(D), 80V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant	2700	1000:$2.2400 500:$2.3600 100:$2.4500 25:$2.5600 1:$2.7500
IPB025N08N3GATMA1 DISTI # 8986898P	Infineon Technologies AG	MOSFET N-CHANNEL 80V 120A TO263-3, RL	198	10:£1.9800
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3	1398	500:£2.4100 250:£2.7000 100:£2.8400 10:£3.2700 1:£4.2900
IPB025N08N3GATMA1 DISTI # 1775525	Infineon Technologies AG	MOSFET, N CH, 120A, 80V, PG-TO263-3 RoHS: Compliant	298	1000:$3.9800 500:$4.7300 250:$5.2700 100:$5.5600 10:$6.4000 1:$7.5400

関連製品

画像	モデル	説明
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	Mfr.#: IPB025N10N3 G OMO.#: OMO-IPB025N10N3-G	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB025N10N3GATMA1 OMO.#: OMO-IPB025N10N3GATMA1	MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB025N08N3 OMO.#: OMO-IPB025N08N3-1190	ブランドニューオリジナル
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