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IPB025N10N3 G

IPB025N10N3 G
Mfr. #:
IPB025N10N3 G
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
ライフサイクル:
メーカー新製品
データシート:
IPB025N10N3 G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPB025N10N3 G 詳しくは
製品属性
属性値
Tags
IPB025N1, IPB025, IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB025N10N3GATMA1
DISTI # IPB025N10N3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 2000:$3.3971
  • 1000:$3.5759
IPB025N10N3GE8187ATMA1
DISTI # IPB025N10N3GE8187ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A TO263-7
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 1000:$3.1162
IPB025N10N3GATMA1
DISTI # IPB025N10N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 500:$4.0778
  • 100:$4.6829
  • 10:$5.6560
  • 1:$6.2600
IPB025N10N3GATMA1
DISTI # IPB025N10N3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 180A TO263-7
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 500:$4.0778
  • 100:$4.6829
  • 10:$5.6560
  • 1:$6.2600
IPB025N10N3GATMA1
DISTI # V72:2272_06378745		Infineon Technologies AGTrans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB025N10N3GATMA1
    DISTI # V36:1790_06378745    		Infineon Technologies AGTrans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		0
    • 1000000:$3.4000
    • 500000:$3.4030
    • 100000:$3.6630
    • 10000:$4.1130
    • 1000:$4.1880
    IPB025N10N3G
    DISTI # IPB025N10N3 G    		Infineon Technologies AGTrans MOSFET N-CH 100V 180A 7-Pin TO-263 T/R (Alt: IPB025N10N3 G)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Asia - 0
      IPB025N10N3GATMA1
      DISTI # IPB025N10N3GATMA1      		Infineon Technologies AGMV POWER MOS - Tape and Reel (Alt: IPB025N10N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 10000:$2.9900
      • 6000:$3.0900
      • 4000:$3.1900
      • 2000:$3.2900
      • 1000:$3.4900
      IPB025N10N3GATMA1
      DISTI # 47W3462      		Infineon Technologies AGMV POWER MOS - Bulk (Alt: 47W3462)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk      		Americas - 0
        IPB025N10N3GATMA1
        DISTI # SP000469888        		Infineon Technologies AGMV POWER MOS (Alt: SP000469888)
        RoHS: Compliant
        Min Qty: 1000        		Europe - 0
        • 10000:€2.5900
        • 6000:€2.7900
        • 4000:€2.9900
        • 2000:€3.0900
        • 1000:€3.2900
        IPB025N10N3GE8197ATMA1
        DISTI # IPB025N10N3GE8197ATMA1        		Infineon Technologies AG- Bulk (Alt: IPB025N10N3GE8197ATMA1)
        Min Qty: 151
        Container: Bulk        		Americas - 0
          IPB025N10N3GE8187ATMA1
          DISTI # IPB025N10N3GE8187ATMA1          		Infineon Technologies AG- Bulk (Alt: IPB025N10N3GE8187ATMA1)
          Min Qty: 151
          Container: Bulk          		Americas - 0
            IPB025N10N3GATMA1.
            DISTI # 26AC0487            		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.002ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V,Power Dissipation Pd:300W,No. of Pins:7Pins RoHS Compliant: Yes0
            • 10000:$2.9900
            • 6000:$3.0900
            • 4000:$3.1900
            • 2000:$3.2900
            • 1:$3.4900
            IPB025N10N3 G
            DISTI # 726-IPB025N10N3G            		Infineon Technologies AGMOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		0
            • 1:$6.4300
            • 10:$5.4700
            • 100:$4.7400
            • 250:$4.5000
            • 500:$4.0300
            • 1000:$3.4000
            • 2000:$3.2300
            IPB025N10N3GATMA1
            DISTI # 726-IPB025N10N3GATMA            		Infineon Technologies AGMOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		0
            • 1:$6.4300
            • 10:$5.4700
            • 100:$4.7400
            • 250:$4.5000
            • 500:$4.0300
            • 1000:$3.4000
            • 2000:$3.2300
            IPB025N10N3GE818XT
            DISTI # 726-IPB025N10N3GEMA1            		Infineon Technologies AGMOSFET N-Ch 100V 180A D2PAK-6
            RoHS: Compliant            		0
              IPB025N10N3GATMA1
              DISTI # 7545421              		Infineon Technologies AGMOSFET N-CHANNEL 100V 180A TO263-7, EA66
              • 500:£2.7500
              • 250:£3.0700
              • 50:£3.4100
              • 10:£3.7300
              • 1:£4.7000
              IPB025N10N3GATMA1
              DISTI # 7545421P              		Infineon Technologies AGMOSFET N-CHANNEL 100V 180A TO263-7, RL383
              • 500:£2.7500
              • 250:£3.0700
              • 50:£3.4100
              • 10:£3.7300
              IPB025N10N3GATMA1
              DISTI # 2212822              		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO263-7
              RoHS: Compliant              		3050
              • 2000:$4.8700
              • 1000:$5.1200
              • 500:$6.0700
              • 250:$6.7800
              • 100:$7.1400
              • 10:$8.2400
              • 1:$9.6900
              IPB025N10N3GATMA1
              DISTI # 2212822              		Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO263-70
              • 500:£3.1400
              • 250:£3.5000
              • 100:£3.6900
              • 10:£4.2600
              • 1:£5.5200
              IPB025N10N3 G
              DISTI # TMOSP9671              		Infineon Technologies AGN-CH 100V 180A3mOhm TO263-7
              RoHS: Compliant              		Stock DE - 2000Stock HK - 0Stock US - 0
              • 1000:$4.4900
              画像 モデル 説明
              IPB025N10N3 G

              Mfr.#: IPB025N10N3 G

              OMO.#: OMO-IPB025N10N3-G

              		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
              IPB025N10N3GATMA1

              Mfr.#: IPB025N10N3GATMA1

              OMO.#: OMO-IPB025N10N3GATMA1

              		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
              IPB025N08N3GATMA1

              Mfr.#: IPB025N08N3GATMA1

              OMO.#: OMO-IPB025N08N3GATMA1

              		 MOSFET MV POWER MOS
              IPB025N08N3

              Mfr.#: IPB025N08N3

              OMO.#: OMO-IPB025N08N3-1190

              		 ブランドニューオリジナル
              IPB025N08N3G

              Mfr.#: IPB025N08N3G

              OMO.#: OMO-IPB025N08N3G-1190

              		 ブランドニューオリジナル
              IPB025N08N3GATMA1

              Mfr.#: IPB025N08N3GATMA1

              OMO.#: OMO-IPB025N08N3GATMA1-INFINEON-TECHNOLOGIES

              		 MOSFET N-CH 80V 120A TO263-3
              IPB025N10N3 G

              Mfr.#: IPB025N10N3 G

              OMO.#: OMO-IPB025N10N3-G-1190

              		 MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
              IPB025N10N3G , 2SD1824

              Mfr.#: IPB025N10N3G , 2SD1824

              OMO.#: OMO-IPB025N10N3G-2SD1824-1190

              		 ブランドニューオリジナル
              IPB025N10N3GE8197ATMA1

              Mfr.#: IPB025N10N3GE8197ATMA1

              OMO.#: OMO-IPB025N10N3GE8197ATMA1-1190

              		 - Bulk (Alt: IPB025N10N3GE8197ATMA1)
              IPB025N10N3GE818XT

              Mfr.#: IPB025N10N3GE818XT

              OMO.#: OMO-IPB025N10N3GE818XT-317

              		 RF Bipolar Transistors MOSFET N-Ch 100V 180A D2PAK-6
              可用性
              ストック:
              Available
              注文中:
              4000
              数量を入力してください:
              IPB025N10N3 Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
              参考価格（USD）
              量
              単価
              小計金額
              1
              $0.00
              $0.00
              10
              $0.00
              $0.00
              100
              $0.00
              $0.00
              500
              $0.00
              $0.00
              1000
              $0.00
              $0.00
              皮切りに
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