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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 10441In Stock |
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| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 10441In Stock |
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| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 10000In Stock |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
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| BSC080N03MS G DISTI # BSC080N03MS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R (Alt: BSC080N03MS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 |
|
| BSC080N03MS G DISTI # BSC080N03MSG | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON T/R - Bulk (Alt: BSC080N03MSG) RoHS: Compliant Min Qty: 1389 Container: Bulk | Americas - 0 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Bulk (Alt: BSC080N03MSGATMA1) RoHS: Compliant Min Qty: 1786 Container: Bulk | Americas - 0 |
|
| BSC080N03MSGATMA1 DISTI # SP000311514 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP (Alt: SP000311514) RoHS: Compliant Min Qty: 5000 | Europe - 0 |
|
| BSC080N03MSGATMA1 DISTI # 60R2503 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 | |
| BSC080N03MS G DISTI # 726-BSC080N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M RoHS: Compliant | 9650 |
|
| BSC080N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC080N03MSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9791 |
|
| BSC080N03MS G | Infineon Technologies AG | 75 | ||
| BSC080N03MSGATMA1 DISTI # 7545288P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL | 235 |
|
| BSC080N03MSGATMA1 DISTI # 7545288 | Infineon Technologies AG | MOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, PK | 120 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8 | 5000 |
|
| BSC080N03MSGATMA1 DISTI # 1775456 | Infineon Technologies AG | MOSFET, N CH, 53A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC080N03MSG | Infineon Technologies AG | 30V,8m,53A,N-Channel Power MOSFET | 67 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: 080N03L OMO.#: OMO-080N03L-1190 |
ブランドニューオリジナル |
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Mfr.#: 080N03LS OMO.#: OMO-080N03LS-1190 |
ブランドニューオリジナル |
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Mfr.#: 080N03LSG OMO.#: OMO-080N03LSG-1190 |
ブランドニューオリジナル |
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Mfr.#: 080N03MS OMO.#: OMO-080N03MS-1190 |
ブランドニューオリジナル |
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Mfr.#: 080N06N OMO.#: OMO-080N06N-1190 |
ブランドニューオリジナル |
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Mfr.#: 080N30D OMO.#: OMO-080N30D-1190 |
ブランドニューオリジナル |