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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP315 E6327 | Siemens | 2000 | ||
| BSP315E-6327 | Infineon Technologies AG | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 1000 | |
| BSP315E-6327 | Infineon Technologies AG | 1.1 A, 50 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET | 801 |
|
| BSP315E6327 | Infineon Technologies AG | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | Europe - 8900 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSP315P H6327 OMO.#: OMO-BSP315P-H6327 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
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Mfr.#: BSP315PH6327XTSA1 OMO.#: OMO-BSP315PH6327XTSA1 |
MOSFET P-Ch -60V -1.17A SOT-223-3 |
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Mfr.#: BSP315 OMO.#: OMO-BSP315-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP315 E6327 , TEA1792AT |
ブランドニューオリジナル |
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Mfr.#: BSP315 E6433 OMO.#: OMO-BSP315-E6433-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP315P-E6327 |
MOSFET P-CH 60V 1.17A SOT-223 |
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Mfr.#: BSP315PH6327XTSA1 |
MOSFET P-CH 60V 1.17A SOT-223 |
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Mfr.#: BSP315PL6327 OMO.#: OMO-BSP315PL6327-1190 |
POWER FIELD-EFFECT TRANSISTOR, 1.17A I(D), 60V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: BSP315 E6918 OMO.#: OMO-BSP315-E6918-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP315PE6327T |
MOSFET P-CH 60V 1.17A SOT-223 |