CMLDM5757 TR

Mfr. #:: CMLDM5757 TR
メーカー:: Central Semiconductor
説明:: Darlington Transistors MOSFET Small Signal Mosfet Dual P Channel
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データシート:: CMLDM5757 TR データシート
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詳しくは:: CMLDM5757 TR 詳しくは

製品属性
属性値

メーカー: セントラルセミコンダクターコーポレーション

製品カテゴリ: FET-アレイ

シリーズ: CMLDM5

包装: Digi-ReelR代替パッケージ

単位重量: 0.000289 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-563, SOT-666

テクノロジー: Si

作動温度: -65°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: SOT-563

構成: デュアル

FETタイプ: 2 P-Channel (Dual)

パワーマックス: 350mW

トランジスタタイプ: 2 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 175pF @ 16V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 430mA

Rds-On-Max-Id-Vgs: 900 mOhm @ 430mA, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 1.2nC @ 4.5V

Pd-電力損失: 350 mW

最高作動温度: + 150 C

最低作動温度: - 65 C

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 430 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 2 Ohms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 48 ns

典型的なターンオン遅延時間: 38 ns

Qg-Gate-Charge: 1.2 nC

チャネルモード: 強化

Tags: CMLDM5, CMLDM, CMLD, CML

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CMLDM5757 TR 説明

***et: P-Channel Enhancement Mode MOSFET Dual 20V 430mA 6-Pin SOT-563 T/R

***ure Electronics: CMLDM5757 Series 20 V 2 Ohm Dual P-Channel Enhancement-Mode Silicon Mosfet

***i-Key: MOSFET 2P-CH 20V 430MA SOT563

CMLDM5757 TR 詳しくは

CxxDM Surface Mount Enhancement-Mode MOSFETs: Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Market price

モデル	メーカー	説明	ストック	価格
CMLDM5757 TR DISTI # CMLDM5757CT-ND	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5815In Stock	1000:$0.2641 500:$0.3417 100:$0.4660 10:$0.6210 1:$0.7400
CMLDM5757 TR DISTI # CMLDM5757DKR-ND	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5815In Stock	1000:$0.2641 500:$0.3417 100:$0.4660 10:$0.6210 1:$0.7400
CMLDM5757 TR DISTI # CMLDM5757TR-ND	Central Semiconductor Corp	MOSFET 2P-CH 20V 430MA SOT563 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.2338
CMLDM5757 TR DISTI # CMLDM5757 TR	Central Semiconductor Corp	P-Channel Enhancement Mode MOSFET Dual 20V 430mA 6-Pin SOT-563 T/R - Tape and Reel (Alt: CMLDM5757 TR) RoHS: Not Compliant Min Qty: 6000 Container: Reel	Americas - 0	6000:$0.1799 12000:$0.1719 18000:$0.1639 30000:$0.1599 60000:$0.1559
CMLDM5757 TR DISTI # 610-CMLDM5757	Central Semiconductor Corp	MOSFET Small Signal Mosfet Dual P Channel RoHS: Compliant	0	3000:$0.1990 6000:$0.1990 9000:$0.1860 24000:$0.1760 45000:$0.1720
CMLDM5757 TR	CENT SEMI		2764

画像	モデル	説明
	Mfr.#: CMLDM5757 TR OMO.#: OMO-CMLDM5757-TR	MOSFET Small Signal Mosfet Dual P Channel
	Mfr.#: CMLDM5757 OMO.#: OMO-CMLDM5757-1190	ブランドニューオリジナル
	Mfr.#: CMLDM5757TR OMO.#: OMO-CMLDM5757TR-1190	ブランドニューオリジナル
	Mfr.#: CMLDM5757 TR OMO.#: OMO-CMLDM5757-TR-CENTRAL-SEMICONDUCTOR	Darlington Transistors MOSFET Small Signal Mosfet Dual P Channel

CMLDM5757 TR

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes