SI3430DV-T1-E3

Mfr. #:: SI3430DV-T1-E3
メーカー:: Vishay
説明:: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
ライフサイクル:: メーカー新製品
データシート:: SI3430DV-T1-E3 データシート
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詳しくは:: SI3430DV-T1-E3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: -

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI3430DV-E3

単位重量: 0.000705 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: SOT-23-6 Thin, TSOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 6-TSOP

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.14W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 1.8A (Ta)

Rds-On-Max-Id-Vgs: 170 mOhm @ 2.4A, 10V

Vgs-th-Max-Id: 2V @ 250μA (Min)

ゲートチャージ-Qg-Vgs: 6.6nC @ 10V

Pd-電力損失: 1.14 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 11 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 2.4 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Rds-On-Drain-Source-Resistance: 170 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 16 ns

典型的なターンオン遅延時間: 9 ns

チャネルモード: 強化

Tags: SI3430, SI343, SI34, SI3

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3430DV-T1-E3 説明

***ure Electronics: Single N-Channel 100 V 0.17 Ohms Surface Mount Power Mosfet - TSOP-6

***et Europe: Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

***Components: MOSFET N-Channel 100V 1.8A TSOP6

***i-Key: MOSFET N-CH 100V 1.8A 6-TSOP

***ronik: N-CHANNEL-FET 2,4A 100V TSOP-6 RoHSconf

***ser: N-Channel MOSFETs 100V 8A 2W

***ponent Sense: MOSFET 100V 8A 2W

***ied Electronics & Automation: TRANSITOR, SI2323DS

***: 100V, 170 MOHMS@10V

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.17Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:1.14W; No. Of Pins:6Pins Rohs Compliant: No

SI3430DV-T1-E3 詳しくは

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI3430DV-T1-E3 DISTI # V72:2272_07433160	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	49	25:$0.8309 10:$0.8590 1:$0.9585
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.4500
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.4966 500:$0.6290 100:$0.8111 10:$1.0260 1:$1.1600
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Cut TR (SOS) (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 1 Container: Cut Tape	Americas - 61	1:$0.8579 30:$0.8069 75:$0.8049 150:$0.7699 375:$0.6689 750:$0.5459 1500:$0.5439
SI3430DV-T1-E3 DISTI # SI3430DV-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3430DV-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5239 6000:$0.5079 12000:$0.4869 18000:$0.4739 30000:$0.4609
SI3430DV-T1-E3 DISTI # 06J7594	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W , RoHS Compliant: Yes	0	1:$1.2100 10:$1.0700 25:$0.9980 50:$0.9230 100:$0.8480 500:$0.6570 1000:$0.5190
SI3430DV-T1-E3 DISTI # 65K1923	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 1.8A, TSOP, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):185mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V , RoHS Compliant: Yes	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3. DISTI # 15AC0293	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:1.8A,Drain Source Voltage Vds:100V,On Resistance Rds(on):170mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.14W,No. of Pins:6Pins , RoHS Compliant: No	0	1:$0.4700 3000:$0.4700
SI3430DV-T1-E3 DISTI # 781-SI3430DV-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	360	1:$1.2600 10:$1.0400 100:$0.7940 500:$0.6820 1000:$0.6000 3000:$0.5990
SI3430DV-T1 DISTI # 781-SI3430DV	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Not compliant	0
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	16	5:$1.0820 1:$1.3525
SI3430DV-T1-E3	Vishay Intertechnologies	1800 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	292	81:$0.4500 18:$0.7500 1:$1.5000
SI3430DV-T1-E3	Vishay BLH		365	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600
SI3430DV-T1-E3.	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - 530	10:$0.7040
SI3430DV-T1-E3	Vishay Intertechnologies	MOSFET 100V 8A 2W RoHS: Compliant	Americas - Stock
SI3430DV-T1-E3 DISTI # C1S803600844371	Vishay Intertechnologies	MOSFETs RoHS: Compliant	49	25:$0.8309 10:$0.8590

画像	モデル	説明
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3	MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3	MOSFET 100V, 170 MOHMS@10V
	Mfr.#: SI3430DV-T1-GE3 OMO.#: OMO-SI3430DV-T1-GE3-VISHAY	IGBT Transistors MOSFET 100V 2.4A 2.0W 170mohm @ 10V
	Mfr.#: SI3430DV OMO.#: OMO-SI3430DV-1190	ブランドニューオリジナル
	Mfr.#: SI3430DV-T1-E3 OMO.#: OMO-SI3430DV-T1-E3-VISHAY	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R

SI3430DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes