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STU95N2LH5

STU95N2LH5
Mfr. #:
STU95N2LH5
メーカー:
STMicroelectronics
説明:
MOSFET N-CH 25V 80A TO220-3
ライフサイクル:
メーカー新製品
データシート:
STU95N2LH5 データシート
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詳しくは:
STU95N2LH5 詳しくは STU95N2LH5 Product Details
製品属性
属性値
Tags
STU95, STU9, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 25 V, 0.0038 Ohm, 80 A - IPAK Power MOSFET
***et
Trans MOSFET N-CH 25V 80A 3-Pin(3+Tab) TO-220 Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 25V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 25V, 80A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0044ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 70W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 25V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
***icroelectronics
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
***ical
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
N-Channel 30 V 4.7 mO Flange Mount STripFET™ VI DeepGATE™ Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 30V, 80A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:- RoHS Compliant: Yes
***ure Electronics
N-Channel 30 V 0.005 O Flange Mount STripFET™ V Power MOSFET - TO-220
***icroelectronics
N-channel 30 V, 0.0042 Ohm , 80 A, TO-220; Power MOSFETs
***nell
MOSFET, N CH, 30V, 80A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 70W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 80A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Max: 22V; Voltage Vgs Rds on Measurement: 10V
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***eco
Transistor STP80NF03L-04 N-Channel MOSFET 30 Volt 80 Amp TO-220
*** Source Electronics
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 30V 80A TO-220
***ure Electronics
N-Channel 30 V 0.004 Ohm Flange Mount STripFET II Power Mosfet - TO-220
***ponent Stockers USA
80 A 30 V 0.0055 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N Channel Mosfet, 30V, 80A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:80A; On Resistance Rds(On):0.004Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***ure Electronics
Single N-Channel 30 V 4.2 mOhm 38 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 70A 3-Pin(3+Tab) TO-220 Tube
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, PG-TO220-3, RoHS
***nell
MOSFET, N-CH, 30V, 70A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.2V; Power Dissipation Pd: 79W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.2 / Gate-Source Voltage V = 20 / Fall Time ns = 4.4 / Rise Time ns = 5.6 / Turn-OFF Delay Time ns = 28 / Turn-ON Delay Time ns = 7.4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 79
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***i-Key
MOSFET N-CH 30V 80A TO-220
***ark
MOSFET; Continuous Drain Current, Id:100A; On-Resistance, Rds(on):0.007ohm; Package/Case:3-TO-220; Drain-Source Breakdown Voltage:30V; Gate-Source Voltage:3V; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
***ment14 APAC
MOSFET, N LOGIC TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Power Dissipation Pd:125W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:TO-220 (SOT-78B); Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:300A; Voltage Vds:30V; Voltage Vgs th Max:2V
***ure Electronics
Single N-Channel 30 V 5.5 mOhm 31 nC OptiMOS™ Power Mosfet - TO-220-3
***ical
Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-220 Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N CH, 50A, 30V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:68W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Power Dissipation Pd:68W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TO220-3, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
モデル メーカー 説明 ストック 価格
STU95N2LH5
DISTI # 497-12703-5-ND		STMicroelectronicsMOSFET N-CH 25V 80A TO220-3
RoHS: Compliant
Min Qty: 3000
Container: Tube		Limited Supply - Call
    STU95N2LH5
    DISTI # 511-STU95N2LH5    		STMicroelectronicsMOSFET N-Ch, 25V-0.0038ohms 80A
    RoHS: Compliant    		0
      画像 モデル 説明
      STU95N3LLH6

      Mfr.#: STU95N3LLH6

      OMO.#: OMO-STU95N3LLH6

      		 MOSFET N-channel 30 V 80 A DPAK
      STU95N2LH5

      Mfr.#: STU95N2LH5

      OMO.#: OMO-STU95N2LH5-STMICROELECTRONICS

      		 MOSFET N-CH 25V 80A TO220-3
      STU95N3LLH6

      Mfr.#: STU95N3LLH6

      OMO.#: OMO-STU95N3LLH6-STMICROELECTRONICS

      		 MOSFET N-CH 30V 80A IPAK
      STU95N4F3

      Mfr.#: STU95N4F3

      OMO.#: OMO-STU95N4F3-STMICROELECTRONICS

      		 MOSFET N-CH 40V 80A IPAK
      可用性
      ストック:
      Available
      注文中:
      1000
      数量を入力してください:
      STU95N2LH5の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
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      100
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      500
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