FQD12N20TM

Mfr. #:: FQD12N20TM
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 200V 9A DPAK
ライフサイクル:: メーカー新製品
データシート:: FQD12N20TM データシート
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製品属性
属性値

メーカー: フェアチャイルド

製品カテゴリ: ICチップ

包装: リール

単位重量: 0.009184 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 2.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 55 ns

立ち上がり時間: 120 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 200 V

Rds-On-Drain-Source-Resistance: 280 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 30 ns

典型的なターンオン遅延時間: 13 ns

フォワード-相互コンダクタンス-最小: 7.3 S

チャネルモード: 強化

Tags: FQD12N20TM, FQD12N20T, FQD12N2, FQD12N, FQD12, FQD1, FQD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQD12N20TM 説明

***emi: N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK

***ure Electronics: N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..

Market price

モデル	メーカー	説明	ストック	価格
FQD12N20TM DISTI # V72:2272_06301227	ON Semiconductor	QF 200V 280MOHM L DAPK	2530	25:$0.7695 10:$0.8550 1:$1.0008
FQD12N20TM DISTI # FQD12N20TMFSCT-ND	ON Semiconductor	MOSFET N-CH 200V 9A DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1654In Stock	1000:$0.7564 500:$0.9582 100:$1.2355 10:$1.5630 1:$1.7700
FQD12N20TM DISTI # FQD12N20TMFSDKR-ND	ON Semiconductor	MOSFET N-CH 200V 9A DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1654In Stock	1000:$0.7564 500:$0.9582 100:$1.2355 10:$1.5630 1:$1.7700
FQD12N20TM_F080 DISTI # FQD12N20TM_F080-ND	ON Semiconductor	MOSFET N-CH 200V 9A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
FQD12N20TM DISTI # FQD12N20TMFSTR-ND	ON Semiconductor	MOSFET N-CH 200V 9A DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6855
FQD12N20TM DISTI # 25743570	ON Semiconductor	QF 200V 280MOHM L DAPK	2530	25:$0.7695 18:$0.8550
FQD12N20TM DISTI # 31947508	ON Semiconductor	QF 200V 280MOHM L DAPK	2500	2500:$0.4867
FQD12N20TM DISTI # FQD12N20TM	ON Semiconductor	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD12N20TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 2476	2500:€0.5069 5000:€0.5059 10000:€0.4979 15000:€0.4969 25000:€0.4949
FQD12N20TM DISTI # FQD12N20TM	ON Semiconductor	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20TM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5209 5000:$0.5169 10000:$0.5109 15000:$0.5039 25000:$0.4919
FQD12N20TM DISTI # 82C4013	ON Semiconductor	Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: 82C4013) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	1:$0.6300 5000:$0.6220 10000:$0.6150
FQD12N20TM DISTI # 82C4013	ON Semiconductor	MOSFET, N-CH, 200V, 9A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.21ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,No. of Pins:3Pins RoHS Compliant: Yes	2500	10000:$0.4310 5000:$0.4360 2500:$0.4420 1:$0.4470
FQD12N20TM. DISTI # 23AC5313	Fairchild Semiconductor Corporation	QF 200V 280MOHM L DAPK ROHS COMPLIANT: YES	0	10000:$0.4310 5000:$0.4360 2500:$0.4420 1:$0.4560
FQD12N20TM	Fairchild Semiconductor Corporation	RoHS: Not Compliant	6000	1000:$0.8600 500:$0.9000 100:$0.9400 25:$0.9800 1:$1.0500
FQD12N20TM	ON Semiconductor	N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK RoHS: Compliant	2500Reel	2500:$0.4050
FQD12N20TM DISTI # 512-FQD12N20TM	ON Semiconductor	MOSFET 200V N-Channel QFET RoHS: Compliant	3000	1:$1.0500 10:$0.8960 100:$0.6890 500:$0.6090 1000:$0.4800 2500:$0.4260 10000:$0.4100
FQD12N20TM_F080 DISTI # 512-FQD12N20TM-F080	ON Semiconductor	MOSFET Trans MOS N-Ch 200V 9A 3-Pin 2+Tab RoHS: Compliant	0
FQD12N20TM DISTI # 8089008P	ON Semiconductor	MOSFETFAIRCHILDFQD12N20TM, RL	910	100:£0.6190 50:£0.7140
FQD12N20TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant	Europe - 2500
FQD12N20TM DISTI # 2839276	ON Semiconductor	MOSFET, N-CH, 200V, 9A, TO-252-3 RoHS: Compliant	0	5000:£0.3750 2500:£0.3790
FQD12N20TM DISTI # XSFP00000097556	Fairchild Semiconductor Corporation	RoHS: Compliant	7500	7500:$0.7364 2500:$0.8100
FQD12N20TM DISTI # XSKDRABS0030175	ON SEMICONDUCTOR	RoHS: Compliant	7500	7500:$0.4645 2500:$0.4977
FQD12N20TM DISTI # XSKDRABV0037749	ON SEMICONDUCTOR	RoHS: Compliant	2000	2000:$0.5227 893:$0.5600
FQD12N20TM DISTI # 2839276	ON Semiconductor	MOSFET, N-CH, 200V, 9A, TO-252-3 RoHS: Compliant	0	10000:$0.6220 5000:$0.6350 2500:$0.6570

画像	モデル	説明
	Mfr.#: FQD1216ME/IH-591 OMO.#: OMO-FQD1216ME-IH-591-1190	ブランドニューオリジナル
	Mfr.#: FQD1218ME/I H-5,461 OMO.#: OMO-FQD1218ME-I-H-5-461-1190	ブランドニューオリジナル
	Mfr.#: FQD1218ME/IH-5461(PB FR OMO.#: OMO-FQD1218ME-IH-5461-PB-FR-1190	ブランドニューオリジナル
	Mfr.#: FQD1236E/WH-5 OMO.#: OMO-FQD1236E-WH-5-1190	ブランドニューオリジナル
	Mfr.#: FQD12N20C OMO.#: OMO-FQD12N20C-1190	ブランドニューオリジナル
	Mfr.#: FQD12N20TF OMO.#: OMO-FQD12N20TF-ON-SEMICONDUCTOR	MOSFET N-CH 200V 9A DPAK
	Mfr.#: FQD12N20TM OMO.#: OMO-FQD12N20TM-ON-SEMICONDUCTOR	MOSFET N-CH 200V 9A DPAK
	Mfr.#: FQD12P10TM_AS004 OMO.#: OMO-FQD12P10TM-AS004-317	RF Bipolar Transistors MOSFET P-CH/100V/12A/Q-FET
	Mfr.#: FQD12N20LTM-CUT TAPE OMO.#: OMO-FQD12N20LTM-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: FQD12N20LTM-F085P OMO.#: OMO-FQD12N20LTM-F085P-ON-SEMICONDUCTOR	200V /9A/0.28 OHM @ VGS=10V

FQD12N20TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes