STGW20H65FB

Mfr. #:: STGW20H65FB
メーカー:: STMicroelectronics
説明:: IGBT Transistors IGBT & Power Bipola
ライフサイクル:: メーカー新製品
データシート:: STGW20H65FB データシート
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ECAD Model:
詳しくは:: STGW20H65FB 詳しくは STGW20H65FB Product Details

製品属性
属性値

メーカー: STMicroelectronics

製品カテゴリ: IGBT-シングル

シリーズ: 600-650V IGBTs

包装: チューブ

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

入力方式: 標準

取付タイプ: スルーホール

サプライヤー-デバイス-パッケージ: TO-247-3

構成: 独身

パワーマックス: 168W

Reverse-Recovery-Time-trr: -

Current-Collector-Ic-Max: 40A

電圧-コレクタ-エミッタ-故障-最大: 650V

IGBTタイプ: トレンチフィールドストップ

Current-Collector-Pulsed-Icm: 80A

Vce-on-Max-Vge-Ic: 2V @ 15V, 20A

スイッチング-エネルギー: 77μJ (on), 170μJ (off)

ゲートチャージ: 120nC

Td-on-off-25°C: 30ns/139ns

テスト条件: 400V, 20A, 10 Ohm, 15V

Pd-電力損失: 168 W

最高作動温度: + 175 C

最低作動温度: - 55 C

コレクター-エミッター-電圧-VCEO-マックス: 650 V

コレクター-エミッター-飽和-電圧: 1.55 V

連続-コレクター-電流-at-25-C: 40 A

ゲート-エミッタ-リーク-電流: 250 nA

最大ゲート-エミッタ-電圧: 20 V

連続-コレクタ-電流-Ic-Max: 20 A

Tags: STGW20, STGW2, STGW, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGW20H65FB 説明

***ical: Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: STGW20H65 Series 650 V 20 A High Speed Trench Gate Field-Stop IGBT - TO-247

***et Europe: Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247 Tube

***ronik: IGBT 650V 20A 1,55V TO247-3

***i-Key: IGBT 650V 40A 168W TO247

***ark: Ptd High Voltage

STGW20H65FB 詳しくは

IGBT HB/HB2 Series: STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.

Market price

モデル	メーカー	説明	ストック	価格
STGW20H65FB DISTI # 497-15132-5-ND	STMicroelectronics	IGBT 650V 40A 168W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	330In Stock	1020:$2.0286 510:$2.4053 120:$2.8256 30:$3.2603 1:$3.8400
STGW20H65FB DISTI # STGW20H65FB	STMicroelectronics	Trans IGBT Chip N-CH 650V 40A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW20H65FB) RoHS: Compliant Min Qty: 600 Container: Tube	Americas - 0	600:$1.9900 1200:$1.8900 2400:$1.7900 3600:$1.6900 6000:$1.6900
STGW20H65FB DISTI # 511-STGW20H65FB	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 20 A high speed RoHS: Compliant	468	1:$3.6600 10:$3.1100 100:$2.7000 250:$2.5600 500:$2.3000
STGW20H65FB	ST Microwave Corporation	Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	Europe - 596
STGW20H65FB	STMicroelectronics		1503

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