TGF2025

Mfr. #:: TGF2025
メーカー:: Qorvo
説明:: RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm
ライフサイクル:: メーカー新製品
データシート:: TGF2025 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: TGF2025 詳しくは

製品属性
属性値

メーカー: TriQuint（Qorvo）

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: TGF

包装: ジェルパック

パーツエイリアス: 1098611

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 65 C to + 150 C

テクノロジー: GaAs

構成: 独身

トランジスタタイプ: pHEMT

利得: 14 dB

Pd-電力損失: 0.89 W

最高作動温度: + 150 C

最低作動温度: - 65 C

動作周波数: 20 GHz

Id-連続-ドレイン-電流: 81 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 8 V

フォワード-相互コンダクタンス-最小: 97 mS

Vgs-ゲート-ソース-ブレークダウン-電圧: - 15 V

最大ドレインゲート電圧: 12 V

NF-雑音指数: 0.9 dB

P1dB-圧縮ポイント: 24 dBm

Tags: TGF202, TGF20, TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2025 詳しくは

TGF2018/25 Heterojunction Power FETs: Qorvo TGF2018/25 High-Efficiency Heterojunction Power FETs operate from DC to 20 GHz and are designed using TriQuint's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. The TGF2025 typically provides 24 dBm of output power at P1dB with gain of 14 dB and 58% power-added efficiency at 1 dB compression. This performance makes these appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

Market price

モデル	メーカー	説明	ストック	価格
TGF2025 DISTI # 772-TGF2025	Qorvo	RF JFET Transistors DC-20GHz Gain 14dB NF .9dB P1dB 24dBm RoHS: Compliant	300	100:$6.1000 300:$5.7000 500:$5.3300 1000:$4.9800

関連製品

画像	モデル	説明
	Mfr.#: TGF2979-SM OMO.#: OMO-TGF2979-SM	RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB
	Mfr.#: TGF2956 OMO.#: OMO-TGF2956	RF JFET Transistors DC-12GHz 55W 32V GaN P3dB @ 3GHz 47.6dBm
	Mfr.#: TGF60-07870787-020 OMO.#: OMO-TGF60-07870787-020	Thermal Interface Products 6W/m-K 2002000.5 TGF60 Gray
	Mfr.#: TGF30-07870787-039 OMO.#: OMO-TGF30-07870787-039	Thermal Interface Products 3W/m-K 2002001 TGF30 Sky Blue
	Mfr.#: TGF2160 OMO.#: OMO-TGF2160-318	RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
	Mfr.#: TGF2957 OMO.#: OMO-TGF2957-318	RF JFET Transistors DC-12GHz 70W 32V GaN P3dB @ 3GHz 48.6dBm
	Mfr.#: TGF148-700Z OMO.#: OMO-TGF148-700Z-1190	ブランドニューオリジナル
	Mfr.#: TGF2023-02 OMO.#: OMO-TGF2023-02-1152	RF JFET Transistors 2.5mm GaN Discrete
	Mfr.#: TGFGA1C105M8R OMO.#: OMO-TGFGA1C105M8R-1190	ブランドニューオリジナル
	Mfr.#: TGF4042 OMO.#: OMO-TGF4042-1190	ARBITRARY/FUNCTION/PULSE GEN, 2CH, 40MHZ