TGF2160

Mfr. #:: TGF2160
メーカー:: Qorvo
説明:: RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
ライフサイクル:: メーカー新製品
データシート:: TGF2160 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: TGF2160 詳しくは

製品属性
属性値

メーカー: TriQuint（Qorvo）

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: トレイ

パーツエイリアス: 1098617

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 65 C to + 150 C

テクノロジー: GaAs

構成: デュアル

トランジスタタイプ: pHEMT

利得: 10.4 dB

Pd-電力損失: 5.6 W

最高作動温度: + 150 C

最低作動温度: - 65 C

動作周波数: 20 GHz

Id-連続-ドレイン-電流: 517 mA

Vds-ドレイン-ソース-ブレークダウン-電圧: 12 V

フォワード-相互コンダクタンス-最小: 619 mS

Vgs-ゲート-ソース-ブレークダウン-電圧: - 7 V

P1dB-圧縮ポイント: 32.5 dBm

Tags: TGF2, TGF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGF2160 詳しくは

Triquint GaAs pHEMt Low Noise Amplifiers: TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More

TGF2160 1600µm Discrete GaAs pHEMT: Qorvo TGF2160 1600µm Discrete GaAs pHEMT operates from DC to 20GHz and is designed using the Qorvo 0.25µm power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. Qorvo TGF2160 typically provides 32.5dBm of output power at P1dB with gain of 10.4dB and 63% power-added efficiency at 1dB compression. This performance makes TGF2160 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More

Market price

モデル	メーカー	説明	ストック	価格
TGF2160 DISTI # 772-TGF2160	Qorvo	RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE RoHS: Compliant	0	100:$17.2700 300:$16.1400 500:$15.0900

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