CGHV59350F

Mfr. #:: CGHV59350F
メーカー:: N/A
説明:: RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN
ライフサイクル:: メーカー新製品
データシート:: CGHV59350F データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: CGHV59350F 詳しくは

製品属性
属性値

メーカー: Wolfspeed / Cree

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: トレイ

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 85 C

トランジスタタイプ: HEMT

利得: 11 dB

出力電力: 450 W

最高作動温度: + 85 C

最低作動温度: - 40 C

動作周波数: 5900 MHz

Vds-ドレイン-ソース-ブレークダウン-電圧: 125 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Vgs-ゲート-ソース-ブレークダウン-電圧: - 10 V 2 V

Tags: CGHV59, CGHV5, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV59350F 説明

***i-Key: RF MOSFET HEMT 50V 440217

***hardson RFPD: RF POWER TRANSISTOR

CGHV59350F 詳しくは

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

モデル	メーカー	説明	ストック	価格
CGHV59350F DISTI # CGHV59350F-ND	Wolfspeed	RF MOSFET HEMT 50V 440217 RoHS: Compliant Min Qty: 1 Container: Tray	2In Stock	1:$1,249.2800
CGHV59350F-TB DISTI # CGHV59350F-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV59350F RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$550.0000
CGHV59350F DISTI # 941-CGHV59350F	Cree, Inc.	RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt RoHS: Compliant	11	1:$1,249.2700
CGHV59350F-TB DISTI # 941-CGHV59350F-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	8	1:$550.0000
CGHV59350F DISTI # CGHV59350F	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	0	1:$1,249.2700
CGHV59350F-TB DISTI # CGHV59350F-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	1	1:$550.0000

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	Mfr.#: CGHV59350F OMO.#: OMO-CGHV59350F	RF JFET Transistors GaN HEMT 5.2-5.9GHz, 350 Watt
	Mfr.#: CGHV50200F-AMP OMO.#: OMO-CGHV50200F-AMP	RF Development Tools Test Board with GaN HEMT
	Mfr.#: CGHV50200F OMO.#: OMO-CGHV50200F-WOLFSPEED	RF MOSFET HEMT 40V 440217
	Mfr.#: CGHV59070F OMO.#: OMO-CGHV59070F-WOLFSPEED	RF MOSFET HEMT 50V 440224
	Mfr.#: CGHV59070F-TB OMO.#: OMO-CGHV59070F-TB-WOLFSPEED	TEST FIXTURE FOR CGHV59070F
	Mfr.#: CGHV59350F-TB OMO.#: OMO-CGHV59350F-TB-WOLFSPEED	TEST FIXTURE FOR CGHV59350F
	Mfr.#: CGHV50200F-AMP OMO.#: OMO-CGHV50200F-AMP-WOLFSPEED	EVAL BOARD FOR CGHV50200
	Mfr.#: CGHV59070F-AMP OMO.#: OMO-CGHV59070F-AMP-WOLFSPEED	EVAL BOARD WITH CGHV59070F
	Mfr.#: CGHV59350F OMO.#: OMO-CGHV59350F-WOLFSPEED	RF JFET Transistors 5.2-5.9GHz 350 Watt Gain typ. 10.5dB GaN