SCT3105KLGC11

SCT3105KLGC11
Mfr. #:
SCT3105KLGC11
メーカー:
Rohm Semiconductor
説明:
MOSFET Nch 1200V 24A SiC TO-247N
ライフサイクル:
メーカー新製品
データシート:
SCT3105KLGC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SCT3105KLGC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
SiC
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247N-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
1200 V
Id-連続ドレイン電流:
24 A
Rds On-ドレイン-ソース抵抗:
137 mOhms
Vgs th-ゲート-ソースしきい値電圧:
2.7 V
Vgs-ゲート-ソース間電圧:
4 V to 22 V
Qg-ゲートチャージ:
51 nC
最低動作温度:
- 55 C
最高作動温度:
+ 175 C
構成:
独身
チャネルモード:
強化
包装:
チューブ
シリーズ:
SCT3x
トランジスタタイプ:
1 N-Channel
ブランド:
ロームセミコンダクター
フォワード相互コンダクタンス-最小:
3.4 S
立ち下がり時間:
17 ns
製品タイプ:
MOSFET
立ち上がり時間:
27 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
31 ns
典型的なターンオン遅延時間:
17 ns
Tags
SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
モデル メーカー 説明 ストック 価格
SCT3105KLGC11
DISTI # SCT3105KLGC11-ND
ROHM SemiconductorSCT3105KL IS AN SIC (SILICON CAR
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 450:$12.5240
  • 25:$14.9480
  • 10:$15.5940
  • 1:$16.9700
SCT3105KL
DISTI # SCT3105KLGC11
ROHM Semiconductor- Rail/Tube (Alt: SCT3105KLGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$10.2900
  • 2250:$10.5900
  • 1350:$11.1900
  • 900:$11.8900
  • 450:$12.6900
SCT3105KLGC11
DISTI # 81AC5496
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.105ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 500:$11.8300
  • 250:$12.6500
  • 100:$13.3000
  • 50:$14.2000
  • 25:$15.1000
  • 10:$15.7500
  • 1:$17.1300
SCT3105KLGC11
DISTI # 755-SCT3105KLGC11
ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
450
  • 1:$16.9600
  • 10:$15.5900
  • 25:$14.9500
  • 100:$13.1700
  • 250:$12.5200
  • 500:$11.7100
SCT3105KLGC11
DISTI # 2947070
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W
RoHS: Compliant
0
  • 10:$17.0800
  • 5:$17.5300
  • 1:$19.0500
SCT3105KLGC11ROHM SemiconductorMOSFET Nch 1200V 24A SiC TO-247N
RoHS: Compliant
Americas -
    SCT3105KLGC11
    DISTI # 2947070
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W0
    • 100:£9.5500
    • 50:£10.2000
    • 10:£10.8400
    • 5:£12.2900
    • 1:£12.5500
    画像 モデル 説明
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11

    MOSFET Nch 1200V 24A SiC TO-247N
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11

    MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11-ROHM-SEMI

    SCT3105KL IS AN SIC (SILICON CAR
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    可用性
    ストック:
    888
    注文中:
    2871
    数量を入力してください:
    SCT3105KLGC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $16.96
    $16.96
    10
    $15.59
    $155.90
    25
    $14.95
    $373.75
    100
    $13.17
    $1 317.00
    250
    $12.52
    $3 130.00
    500
    $11.71
    $5 855.00
    1000
    $10.74
    $10 740.00
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