IRFSL7540PBF

IRFSL7540PBF
Mfr. #:
IRFSL7540PBF
メーカー:
Infineon Technologies
説明:
MOSFET 60V Single N-Channel HEXFET Power
ライフサイクル:
メーカー新製品
データシート:
IRFSL7540PBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
IRFSL7540PBF 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-262-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
110 A
Rds On-ドレイン-ソース抵抗:
5.1 mOhms
Vgs th-ゲート-ソースしきい値電圧:
3.7 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
130 nC
Pd-消費電力:
160 W
構成:
独身
チャネルモード:
強化
商標名:
StrongIRFET
包装:
チューブ
高さ:
9.45 mm
長さ:
10.2 mm
トランジスタタイプ:
1 N-Channel
幅:
4.5 mm
ブランド:
インフィニオンテクノロジーズ
フォワード相互コンダクタンス-最小:
110 S
立ち下がり時間:
56 ns
製品タイプ:
MOSFET
立ち上がり時間:
76 ns
ファクトリーパックの数量:
1000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
58 ns
典型的なターンオン遅延時間:
12 ns
パーツ番号エイリアス:
SP001557648
単位重量:
0.073511 oz
Tags
IRFSL75, IRFSL7, IRFSL, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube
***ark
TUBE / MOSFET,60V 120A, 5.34mOhm 86nC, TO-262
***S
French Electronic Distributor since 1988
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***Yang
Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-262 - Rail/Tube
***(Formerly Allied Electronics)
MOSFET, 60V, 160A, 4.2 MOHM, 85 NC QG, TO-262
*** Electronic Components
MOSFET MOSFT 60V 160A 4.2mOhm 85nC
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:160A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
***ure Electronics
Single N-Channel 75 V 4.1 mOhm 120 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 170A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***(Formerly Allied Electronics)
IRFSL7762PBF N-channel MOSFET Transistor, 85 A, 75 V, 3-Pin TO-262
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***nell
MOSFET, N-CH, 75V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0056ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; P
***ineon
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET
***ernational Rectifier
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***et Europe
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262
***(Formerly Allied Electronics)
MOSFET; 75V; 100A; 7.8 MOHM; 160 NC QG; TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
モデル メーカー 説明 ストック 価格
IRFSL7540PBF
DISTI # 31229000
Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant
195
  • 1000:$0.9542
  • 500:$1.1520
  • 100:$1.3152
  • 15:$1.6512
IRFSL7540PBF
DISTI # IRFSL7540PBF-ND
Infineon Technologies AGMOSFET N-CH 60V 120A TO262
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.0926
IRFSL7540PBF
DISTI # C1S322000587535
Infineon Technologies AGMOSFETs200
  • 100:$1.3100
  • 25:$1.5900
  • 5:$1.9700
IRFSL7540PBF
DISTI # IRFSL7540PBF
Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube - Rail/Tube (Alt: IRFSL7540PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$1.0699
  • 2000:$1.0669
  • 4000:$1.0649
  • 6000:$1.0619
  • 10000:$1.0589
IRFSL7540PBF
DISTI # SP001557648
Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-262 Tube (Alt: SP001557648)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.1729
  • 10:€1.0419
  • 25:€0.9379
  • 50:€0.8529
  • 100:€0.7819
  • 500:€0.7209
  • 1000:€0.6699
IRFSL7540PBF
DISTI # 942-IRFSL7540PBF
Infineon Technologies AGMOSFET 60V Single N-Channel HEXFET Power
RoHS: Compliant
1000
  • 1:$2.0200
  • 10:$1.7200
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9940
IRFSL7540PBF
DISTI # 9075132P
Infineon Technologies AGMOSFET N-CHANNEL HEXFET 60V 110A TO262, TU800
  • 100:£0.9900
  • 500:£0.8690
  • 1000:£0.7190
  • 2500:£0.6690
画像 モデル 説明
IRFSL7540PBF

Mfr.#: IRFSL7540PBF

OMO.#: OMO-IRFSL7540PBF

MOSFET 60V Single N-Channel HEXFET Power
IRFSL7434PBF

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MOSFET HEXFET Power MOSFET 40V Single N-Channel
IRFSL7787PBF

Mfr.#: IRFSL7787PBF

OMO.#: OMO-IRFSL7787PBF

MOSFET 75V Single N-Channel HEXFET
IRFSL7440PBF

Mfr.#: IRFSL7440PBF

OMO.#: OMO-IRFSL7440PBF

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Mfr.#: IRFSL7762PBF

OMO.#: OMO-IRFSL7762PBF

MOSFET 75V Single N-Channel HEXFET
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Mfr.#: IRFSL7534PBF

OMO.#: OMO-IRFSL7534PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 195A D2PAK
IRFSL7430PBF

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OMO.#: OMO-IRFSL7430PBF-INFINEON-TECHNOLOGIES

IGBT Transistors MOSFET HEXFET Power MOSFET 40V Single N-Channel
IRFSL7537PBF

Mfr.#: IRFSL7537PBF

OMO.#: OMO-IRFSL7537PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 60V 173A TO262
IRFSL7734PBF

Mfr.#: IRFSL7734PBF

OMO.#: OMO-IRFSL7734PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 75V 183A TO262
IRFSL7787PBF

Mfr.#: IRFSL7787PBF

OMO.#: OMO-IRFSL7787PBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 75V 76A TO262
可用性
ストック:
Available
注文中:
1984
数量を入力してください:
IRFSL7540PBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.01
$2.01
10
$1.71
$17.10
100
$1.37
$137.00
500
$1.19
$595.00
1000
$0.99
$994.00
2000
$0.92
$1 850.00
5000
$0.89
$4 455.00
10000
$0.86
$8 570.00
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