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PD57060S-E

PD57060S-E
Mfr. #:
PD57060S-E
メーカー:
STMicroelectronics
説明:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
ライフサイクル:
メーカー新製品
データシート:
PD57060S-E データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
PD57060S-E 詳しくは PD57060S-E Product Details
製品属性
属性値
メーカー：
STMicroelectronics
製品カテゴリ：
RFMOSFETトランジスタ
JBoss：
Y
トランジスタの極性：
Nチャネル
テクノロジー：
Si
Id-連続ドレイン電流：
7 A
Vds-ドレイン-ソース間降伏電圧：
65 V
利得：
14.3 dB
出力電力：
60 W
最低動作温度：
- 65 C
最高作動温度：
+ 150 C
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
PowerSO-10RF-Straight-4
包装：
チューブ
構成：
独身
高さ：
3.5 mm
長さ：
7.5 mm
動作周波数：
1 GHz
シリーズ：
PD57060S-E
タイプ：
RFパワーMOSFET
幅：
9.4 mm
ブランド：
STMicroelectronics
チャネルモード：
強化
感湿性：
はい
Pd-消費電力：
79 W
製品タイプ：
RFMOSFETトランジスタ
ファクトリーパックの数量：
400
サブカテゴリ：
MOSFET
Vgs-ゲート-ソース間電圧：
20 V
単位重量：
0.105822 oz
Tags
PD5706, PD570, PD57, PD5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***p One Stop
Trans RF MOSFET N-CH 65V 7A 3-Pin(2+Tab) PowerSO-10RF (Straight lead) Tube
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***nell
RF TRANSISTOR, 65V, 945MHZ, POWERSO10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 945MHz; RF Transistor Case: PowerSO-10RF; No. of Pins: 3Pins; Operating Temperature Max: 165°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (07-Jul-2017)
***th Star Micro
Transistor MOSFET N-CH 65V 7A 4-Pin (2+2Tab) PowerSO-10RF (Formed lead) Tube
***icroelectronics
60W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ure Electronics
PD57060-E Series 890 MHz 60 W 65 V N-Channel RF Power Transistor - POWERSO-10RF
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H332K050BA - Condensateur céramique multicouche CMS, 3300 pF, 50 V, 0402 [1005 Metric], ± 10%, X7R, Série CGA
***nell
RF FET, N-CH, 65V, 7A, POWERSO-10RF; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: 7A; Power Dissipation Pd: 79W; Operating Frequency Min: -; Operating Frequency Max: 1GHz; RF Transistor Case: PowerSO-10RF; No. o
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in PSO-10RF plastic package
***icroelectronics SCT
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
***ical
Trans RF MOSFET N-CH 65V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
TDK - CGA2B2X7R1H222K050BA - Keramikvielschichtkondensator, SMD, 2200 pF, 50 V, 0402 [Metrisch 1005], ± 10%, X7R, Baureihe CGA
***ark
60V, 36A, 27M Ohm, Nch, Logic Level Trench Mosfet - To252 (D-Pak), Molded, 3 Lead,Option Aa&Ab
***emi
Trench® MOSFET, N-Channel Logic Level, 60V, 36A, 27mΩ
***p One Stop
Trans MOSFET N-CH 60V 7.7A Automotive 3-Pin(2+Tab) DPAK T/R
***et Japan
Transistor MOSFET N-Channel 60V 7.4A 3-Pin TO-252AA T/R
*** Stop Electro
Power Field-Effect Transistor, 7.4A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, AEC-Q101, NCH, 37A, 60V, TO252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.018ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 72W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: Trench Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
FDD24AN06LA0 Series 60 V 19 mOhm N-Ch Logic Level PowerTrench Mosfet - TO-252AA
***ical
Trans MOSFET N-CH 60V 7.1A Automotive 3-Pin(2+Tab) DPAK T/R
*** Stop Electro
Power Field-Effect Transistor, 7.1A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
LED Indication - Discrete 3 (168 Hours) Tape & Reel (TR) Surface Mount 0603 (1608 Metric) Amber Rectangle with Flat Top 2.05V Standard LED HI-BRIGHT AMBER USS 0603
***nell
MOSFET, AECQ101, N-CH, 60V, 40A, TO252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.016ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 75W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: Power Trench FDD Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***icroelectronics
45W 28V HF to 1GHz LDMOS TRANSISTOR in flangeless package
***et
Transistor RF FET N-CH 65V 5A 945MHz 3-Pin Case M-250
***ser
RF & Microwave Transistors N-Ch 65 Volt 5 Amp
***icroelectronics SCT
RF power transistor, the LdmoST family
***r Electronics
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
Single P-Channel 60 V 0.28 Ohms Surface Mount Power Mosfet - TO-252
*** Stop Electro
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-8.8A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: Yes
***nell
MOSFET, P, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:8.8A; Resistance, Rds On:0.28ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:TO-252; Current, Idm Pulse:35A; External Depth:10.5mm; External Length / Height:2.55mm; No. of Pins:3; Power, Pd:42W; SMD Marking:IRFR9024PBF; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
モデル メーカー 説明 ストック 価格
PD57060S-E
DISTI # V36:1790_06556213		STMicroelectronicsTrans RF MOSFET N-CH 65V 7A 3-Pin PowerSO-10RF (Straight lead) Tube
RoHS: Compliant		0
    PD57060S-E
    DISTI # 497-5310-5-ND    		STMicroelectronicsFET RF 65V 945MHZ PWRSO10
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		On Order
    • 100:$45.5642
    • 50:$49.1700
    • 1:$54.0900
    PD57060S-E
    DISTI # PD57060S-E    		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube (Alt: PD57060S-E)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1000:€35.1900
    • 500:€35.7900
    • 100:€36.1900
    • 50:€36.4900
    • 25:€37.4900
    • 10:€39.5900
    • 1:€42.7900
    PD57060S-E
    DISTI # PD57060S-E    		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bag (Alt: PD57060S-E)
    RoHS: Compliant
    Min Qty: 400
    Container: Bag    		Americas - 0
      PD57060S-E
      DISTI # 45AC7469      		STMicroelectronicsTrans MOSFET N-CH 65V 7A 4-Pin(2+2Tab) PowerSO-10RF (Straight lead) Tube - Bulk (Alt: 45AC7469)
      RoHS: Compliant
      Min Qty: 1
      Container: Bulk      		Americas - 0
      • 1:$50.7500
      PD57060S-E
      DISTI # 45AC7469      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF,Drain Source Voltage Vds:65V,Continuous Drain Current Id:7A,Power Dissipation Pd:79W,Operating Frequency Min:-,Operating Frequency Max:945MHz,RF Transistor Case:PowerSO-10RF,MSL:- RoHS Compliant: Yes66
      • 1:$48.6200
      PD57060S-E
      DISTI # 511-PD57060S-E      		STMicroelectronicsRF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam
      RoHS: Compliant      		0
      • 1:$54.0900
      • 5:$52.8800
      • 10:$50.8100
      • 25:$49.1700
      • 100:$45.5700
      PD57060S-E
      DISTI # 2807340      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF
      RoHS: Compliant      		171
      • 100:$69.0300
      • 50:$74.4900
      • 1:$81.9300
      PD57060S-E
      DISTI # 2807340      		STMicroelectronicsRF TRANSISTOR, 65V, 945MHZ, POWERSO10RF171
      • 50:£34.7900
      • 10:£38.6600
      • 5:£41.5700
      • 1:£41.7400
      PD57060S-E
      DISTI # PD57060S-E      		STMicroelectronicsRF POWER TRANSISTOR
      RoHS: Compliant      		0
      • 400:$45.0200
      • 500:$43.2900
      • 1000:$42.2100
      画像 モデル 説明
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      可用性
      ストック:
      Available
      注文中:
      2000
      数量を入力してください:
      PD57060S-Eの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      400
      $44.26
      $17 704.00
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