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NTMD4884NFR2G

NTMD4884NFR2G
Mfr. #:
NTMD4884NFR2G
メーカー:
ON Semiconductor
説明:
MOSFET NFET FTKY S08 30V TR 5.6A
ライフサイクル:
メーカー新製品
データシート:
NTMD4884NFR2G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NTMD4884NFR2G DatasheetNTMD4884NFR2G Datasheet (P4-P6)NTMD4884NFR2G Datasheet (P7)
ECAD Model:
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
SOIC-8
チャネル数：
2 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
30 V
Id-連続ドレイン電流：
5.7 A
Rds On-ドレイン-ソース抵抗：
48 mOhms
Vgs-ゲート-ソース間電圧：
20 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
Pd-消費電力：
2.3 W
構成：
デュアル
チャネルモード：
強化
包装：
リール
高さ：
1.5 mm
長さ：
5 mm
トランジスタタイプ：
2 N-Channel
幅：
4 mm
ブランド：
オン・セミコンダクター
立ち下がり時間：
1.4 ns
製品タイプ：
MOSFET
立ち上がり時間：
6.5 ns
ファクトリーパックの数量：
2500
サブカテゴリ：
MOSFET
典型的なターンオフ遅延時間：
14 ns
典型的なターンオン遅延時間：
6 ns
単位重量：
0.006596 oz
Tags
NTMD48, NTMD4, NTMD, NTM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
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***et
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***roFlash
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***ure Electronics
Dual N-Channel 30 V 0.04 Ohm 2.3 W Surface Mount Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 5.8A 8-Pin SOIC T/R
***enic
30V 5.8A 40m´Î@10V5A 2.3W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***roFlash
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5.8A; On Resistance Rds(on):0.033ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No
***ment14 APAC
MOSFET, NN-CH, 30V, 5.8A, SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):33mohm; Power Dissipation Pd:2.3W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, Power;Dual P-Ch;VDSS -30V;RDS(ON) 0.1Ohm;ID -3.6A;SO-8;PD 2W;VGS +/-20V
***et Europe
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 5.5A, 38mΩ
***enic
30V 5.5A 38m´Î@10V5.5A 2W 3V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintainsuperior switching performance.These devices are well suited for low voltage andbattery powered applications where low in-line powerloss and fast switching are required.
***emi
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***ure Electronics
N-Channel 30 V 38 mOhm Logic Level PowerTrench Mosfet - SOIC-8
***Yang
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC T/R - Tape and Reel
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Source Voltage Vds:30V; On Resistance Rds(on):0.038ohm;
***rchild Semiconductor
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 6.5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 40A; SMD Marking: FDS6630A; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.7V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 3V; Voltage Vgs th Min: 1V
***Yang
Transistor MOSFET Array Dual N-CH 30V 5.5A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 5.5A, 40mΩ
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
***nell
MOSFET, N, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 5.5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 20A; SMD Marking: FDS6930A; Termination Type: Surface Mount Device; Voltage Vds: 30V; Voltage Vds Typ: 30V; Voltage Vgs Max: 1.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Min: 1V
モデル メーカー 説明 ストック 価格
NTMD4884NFR2G
DISTI # NTMD4884NFR2G-ND		ON SemiconductorMOSFET N-CH 30V 3.3A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NTMD4884NFR2GON Semiconductor 
    RoHS: Not Compliant    		43322
    • 1000:$0.2400
    • 500:$0.2500
    • 100:$0.2600
    • 25:$0.2700
    • 1:$0.2900
    NTMD4884NFR2G
    DISTI # 863-NTMD4884NFR2G    		ON SemiconductorMOSFET NFET FTKY S08 30V TR 5.6A
    RoHS: Compliant    		0
      画像 モデル 説明
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      NTMD4884NFR2G

      Mfr.#: NTMD4884NFR2G

      OMO.#: OMO-NTMD4884NFR2G

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      		 ブランドニューオリジナル
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      Mfr.#: NTMD4820NR2G

      OMO.#: OMO-NTMD4820NR2G-ON-SEMICONDUCTOR

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      NTMD4820NR2G , FM1A4M

      Mfr.#: NTMD4820NR2G , FM1A4M

      OMO.#: OMO-NTMD4820NR2G-FM1A4M-1190

      		 ブランドニューオリジナル
      NTMD4840N

      Mfr.#: NTMD4840N

      OMO.#: OMO-NTMD4840N-1190

      		 ブランドニューオリジナル
      NTMD4884NFR2G

      Mfr.#: NTMD4884NFR2G

      OMO.#: OMO-NTMD4884NFR2G-ON-SEMICONDUCTOR

      		 IGBT Transistors MOSFET NFET FTKY S08 30V TR 5.6A
      可用性
      ストック:
      Available
      注文中:
      3000
      数量を入力してください:
      NTMD4884NFR2Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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