NDS8936

Mfr. #:: NDS8936
メーカー:: ON Semiconductor
説明:: MOSFET 2N-CH 30V 5.3A 8-SOIC
ライフサイクル:: メーカー新製品
データシート:: NDS8936 データシート
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製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: FET-アレイ

シリーズ: -

包装: Digi-ReelR

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: 8-SO

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 900mW

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 720pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 5.3A

Rds-On-Max-Id-Vgs: 35 mOhm @ 5.3A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

ゲートチャージ-Qg-Vgs: 30nC @ 10V

Tags: NDS8936, NDS893, NDS89, NDS8, NDS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDS8936 説明

***ical: Trans MOSFET N-CH 30V 5.3A 8-Pin SOIC T/R

***i-Key: MOSFET 2N-CH 30V 5.3A 8-SOIC

***ser: MOSFETs Dual N-Ch FET Enhancement Mode

***inecomponents.com: RECOMMEND: FDS6912A

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:5.3A; On Resistance, Rds(on):0.035ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

***nell: MOSFET, DUAL, NN, LOGIC, SO-8; Transistor Type:MOSFET; Transistor Polarity:NN; Voltage, Vds Typ:30V; Current, Id Cont:6.7A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:15A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation:2W; Power, Pd:2W; Row Pitch:6.3mm; SMD Marking:NDS8936; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:2; Voltage, Vds Max:30V; Voltage, Vgs th N Channel 1 min:2.8V; Voltage, Vgs th N Channel 2 Min:2.8V; Width, External:4.05mm

***ment14 APAC: MOSFET, DUAL, NN, LOGIC, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:2; Package / Case:SOIC; Pin Configuration:c; Pin Format:1 S1; 2 G1; 3 S2; 4 G2; 5 D2; 6 D2; 7 D1; 8 D1; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:15A; Row Pitch:6.3mm; SMD Marking:NDS8936; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th N Channel 1 Min:2.8V; Voltage Vgs th N Channel 2 Min:2.8V

Market price

モデル	メーカー	説明	ストック	価格
NDS8936 DISTI # NDS8936TR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDS8936 DISTI # NDS8936CT-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NDS8936 DISTI # NDS8936DKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 5.3A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NDS8936 DISTI # 34C1626	ON Semiconductor	DUAL N CHANNEL MOSFET, 30V, 5.3A, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.3A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.6V, RoHS Compliant: Yes	0
NDS8936	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	10943	1000:$0.7900 500:$0.8400 100:$0.8700 25:$0.9100 1:$0.9800
NDS8936 DISTI # 512-NDS8936	ON Semiconductor	MOSFET Dual N-Ch FET Enhancement Mode RoHS: Compliant	0
NDS8936CT	Fairchild Semiconductor Corporation		35
NDS8936	Fairchild Semiconductor Corporation	INSTOCK	62431

画像	モデル	説明
	Mfr.#: NDS9936 OMO.#: OMO-NDS9936	MOSFET Dl N-Ch Enhancement
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	Mfr.#: NDS8936 OMO.#: OMO-NDS8936-ON-SEMICONDUCTOR	MOSFET 2N-CH 30V 5.3A 8-SOIC
	Mfr.#: NDS9405 OMO.#: OMO-NDS9405-ON-SEMICONDUCTOR	MOSFET P-CH 20V 4.3A 8-SOIC
	Mfr.#: NDS9435A-NL OMO.#: OMO-NDS9435A-NL-1190	ブランドニューオリジナル
	Mfr.#: NDS9933 OMO.#: OMO-NDS9933-ON-SEMICONDUCTOR	MOSFET 2P-CH 20V 3.2A 8-SOIC
	Mfr.#: NDS9936-NL OMO.#: OMO-NDS9936-NL-1190	ブランドニューオリジナル
	Mfr.#: NDS9948 OMO.#: OMO-NDS9948-ON-SEMICONDUCTOR	MOSFET 2P-CH 60V 2.3A 8-SOIC
	Mfr.#: NDS9952AHD OMO.#: OMO-NDS9952AHD-1190	ブランドニューオリジナル

NDS8936

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes