FQB4N80TM

Mfr. #:: FQB4N80TM
メーカー:: ON Semiconductor
説明:: MOSFET N-CH 800V 3.9A D2PAK
ライフサイクル:: メーカー新製品
データシート:: FQB4N80TM データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: FSC

製品カテゴリ: FET-シングル

包装: リール

単位重量: 0.046296 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 3.13 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 35 ns

立ち上がり時間: 45 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 3.9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 800 V

Rds-On-Drain-Source-Resistance: 3.6 Ohms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 35 ns

典型的なターンオン遅延時間: 16 ns

フォワード-相互コンダクタンス-最小: 3.8 S

チャネルモード: 強化

Tags: FQB4N, FQB4, FQB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FQB4N80TM 説明

***ark: MOSFET Transistor, N Channel, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V

***ure Electronics: N-Channel 800 V 3.6 Ohm 25 nC Surface Mount Mosfet - D2PAK-3

***et Europe: Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel QFET® MOSFET 800V, 3.9A, 3.6Ω

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***nell: MOSFET, N-CH, 800V, 3.9A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):2.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:130W; Transistor Case Style:TO-263AB; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

モデル	メーカー	説明	ストック	価格
FQB4N80TM DISTI # V72:2272_06301137	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	520	500:$0.8658 250:$0.9806 100:$1.0187 25:$1.3024 10:$1.3043 1:$1.5051
FQB4N80TM DISTI # FQB4N80TMCT-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	803In Stock	100:$1.2683 10:$1.5780 1:$1.7500
FQB4N80TM DISTI # FQB4N80TMDKR-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	803In Stock	100:$1.2683 10:$1.5780 1:$1.7500
FQB4N80TM DISTI # FQB4N80TMTR-ND	ON Semiconductor	MOSFET N-CH 800V 3.9A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	Temporarily Out of Stock	800:$0.9084
FQB4N80TM DISTI # 30703250	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	3200	9600:$0.6421 2400:$0.6673 800:$0.7530
FQB4N80TM DISTI # 29055410	ON Semiconductor	N-CH/800V/3.9A/3.6OHM	520	500:$0.8658 250:$0.9806 100:$1.0187 25:$1.3024 12:$1.3043
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$0.5649 1600:$0.5609 3200:$0.5539 4800:$0.5469 8000:$0.5339
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 0	800:€0.8359 1600:€0.6839 3200:€0.6269 4800:€0.5779 8000:€0.5369
FQB4N80TM DISTI # FQB4N80TM	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R (Alt: FQB4N80TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Asia - 0	800:$0.6872 1600:$0.6608 2400:$0.6363 4000:$0.6136 8000:$0.5925 20000:$0.5727 40000:$0.5633
FQB4N80TM	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	2400	1000:$1.0300 500:$1.0800 100:$1.1300 25:$1.1800 1:$1.2700
FQB4N80TM DISTI # 512-FQB4N80TM	ON Semiconductor	MOSFET 800V N-Channel QFET RoHS: Compliant	1036	1:$1.6400 10:$1.4000 100:$1.0700 500:$0.9460 800:$0.7470 2400:$0.6620 9600:$0.6370
FQB4N80TM DISTI # 6710908P	ON Semiconductor	MOSFET N-CHANNEL 800V 3.9A D2PAK, RL	854	5:£0.5000
FQB4N80TM	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 800
FQB4N80TM DISTI # C1S541901511368	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	3200	2400:$0.6880 1600:$0.8310 800:$0.8990
FQB4N80TM DISTI # C1S541901596147	ON Semiconductor	Trans MOSFET N-CH 800V 3.9A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	520	250:$0.9806 100:$1.0187 25:$1.3024 10:$1.3043
FQB4N80TM DISTI # 2453890RL	ON Semiconductor	MOSFET, N-CH, 800V, 3.9A, TO-263AB-3 RoHS: Compliant	0	1:$2.6000 10:$2.2200 100:$1.7000 500:$1.5100 800:$1.1900 2400:$1.0500 9600:$1.0100
FQB4N80TM DISTI # 2453890	ON Semiconductor	MOSFET, N-CH, 800V, 3.9A, TO-263AB-3 RoHS: Compliant	0	1:$2.6000 10:$2.2200 100:$1.7000 500:$1.5100 800:$1.1900 2400:$1.0500 9600:$1.0100

画像	モデル	説明
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	Mfr.#: FQB45N15V2TM OMO.#: OMO-FQB45N15V2TM-ON-SEMICONDUCTOR	MOSFET N-CH 150V 45A D2PAK
	Mfr.#: FQB46N15TM OMO.#: OMO-FQB46N15TM-1190	Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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	Mfr.#: FQB4N60C OMO.#: OMO-FQB4N60C-1190	ブランドニューオリジナル
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	Mfr.#: FQB4N90TM-NL OMO.#: OMO-FQB4N90TM-NL-1190	ブランドニューオリジナル
	Mfr.#: FQB4P40TM-NL OMO.#: OMO-FQB4P40TM-NL-1190	ブランドニューオリジナル
	Mfr.#: FQB44N10TM OMO.#: OMO-FQB44N10TM-ON-SEMICONDUCTOR	MOSFET N-CH 100V 43.5A D2PAK

FQB4N80TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes